Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism
In recent years, Ga2O3 solar-blind photodetectors (SBPDs) have received great attention for
their potential applications in solar-blind imaging, deep space exploration, confidential …
their potential applications in solar-blind imaging, deep space exploration, confidential …
Gate leakage mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: comparison and modeling
S Turuvekere, N Karumuri, AA Rahman… - … on electron devices, 2013 - ieeexplore.ieee.org
The gate leakage mechanisms in AlInN/GaN and AlGaN/GaN high electron mobility
transistors (HEMTs) are compared using temperature-dependent gate current-voltage (I GV …
transistors (HEMTs) are compared using temperature-dependent gate current-voltage (I GV …
Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors
We report on the highest responsivity for III-nitride Metal Semiconductor Metal solar-blind
photodetectors on sapphire. Devices on unintentionally doped AlGaN epilayers grown by …
photodetectors on sapphire. Devices on unintentionally doped AlGaN epilayers grown by …
Carrier Transport and Gain Mechanisms in –Ga2O3-Based Metal–Semiconductor–Metal Solar-Blind Schottky Photodetectors
In this paper, carrier transport and gain mechanisms are exploited in the β-Ga 2 O 3-based
metal-semiconductor-metal photodetectors with Au back-to-back Schottky contacts. The …
metal-semiconductor-metal photodetectors with Au back-to-back Schottky contacts. The …
On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors
D Yan, H Lu, D Cao, D Chen, R Zhang… - Applied Physics …, 2010 - pubs.aip.org
In this work, we include the polarization effect within the AlGaN barrier into calculation of the
near-surface electrical field ES underneath the Schottky contact metal which determines the …
near-surface electrical field ES underneath the Schottky contact metal which determines the …
Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors
S Latrach, E Frayssinet, N Defrance, S Chenot… - Current Applied …, 2017 - Elsevier
The paper deals with trap effects in InAlN/AlN/GaN and AlGaN/AlN/GaN high electron
mobility transistor structures using frequency dependent conductance and High-Low …
mobility transistor structures using frequency dependent conductance and High-Low …
Investigation of leakage current paths in n-GaN by conductive atomic force microscopy
We have investigated electrical characteristics of leakage current paths in n-GaN layer
grown by metal-organic chemical vapor deposition with conductive-atomic force microscopy …
grown by metal-organic chemical vapor deposition with conductive-atomic force microscopy …
Phonon transport properties of bulk and monolayer GaN from first-principles calculations
The thermal conductivity of isotopically pure wurtzite GaN and the corresponding two-
dimensional monolayer crystals are investigated based on first-principles calculations and …
dimensional monolayer crystals are investigated based on first-principles calculations and …
Evidence of Poole-frenkel and Fowler-Nordheim tunneling transport mechanisms in leakage current of (Pd/Au)/Al0. 22Ga0. 78N/GaN heterostructures
In this report, the gate leakage mechanism for AlGaN/GaN high electron mobility transistors
(HEMTs) is consistently analyzed by means of temperature-dependent reverse gate current …
(HEMTs) is consistently analyzed by means of temperature-dependent reverse gate current …
Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
A Sasikumar, AR Arehart, S Martin-Horcajo… - Applied Physics …, 2013 - pubs.aip.org
Traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors (HEMTs) are identified
and compared using constant drain-current deep level transient spectroscopy (CI D-DLTS) …
and compared using constant drain-current deep level transient spectroscopy (CI D-DLTS) …