The significant advance of power electronics in today's market is calling for high-
performance power conversion systems and MEMS devices that can operate reliably in …

The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC)
mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium …

High efficiency, high power density, and high reliability are always the technical trends of
converters for renewable energy applications. Silicon carbide (SiC) devices can break …

State-of-the-art silicon carbide (SiC) power devices provide superior performance over
silicon devices with much higher switching frequencies/speed and lower losses. High …

Because of fast switching speeds and inevitable stray parameters, the efficiency, security,
and stability properties of SiC mosfets in practice are challenged by voltage and current …

Because of higher switching speed of silicon carbide MOSFET, the crosstalk in a phase-leg
configuration will be more serious, which hinders the increase of switching frequency and …

Silicon carbide (SiC) power electronic devices feature the advantages of fast switching
speed, low conduction loss, and reliable operation in high temperature environment, etc …

This paper investigates gate driver design challenges encountered due to the fast switching
transients in medium voltage half bridge silicon carbide MOSFET power modules. The paper …

The increasing demand for high power density requires the power converter to operate in
high switching frequency. Silicon carbide (SiC) power module is regarded as one of the …

The trend towards SiC-based high power density converter requires to drive SiC MOSFET
with high-speed switching. However, it tends to aggravate dv/dt effect due to the impact of …