Ferroelectric materials have been intensively investigated for high‐performance nonvolatile
memory devices in the past decades, owing to their nonvolatile polarization characteristics …

Artificial intelligence (AI) has revolutionized present-day life through automation and
independent decision-making capabilities. For AI hardware implementations, the 6T-SRAM …

In this study, we present an analytical equation for describing the memory window of
ferroelectric field-effect transistors (FeFETs). The analytical equation is derived based on the …

Memory arrays and computing-in-memory architecture based on emerging nonvolatile
memory devices with a current-sensing scheme face several challenges when implemented …

Novel computer architectures like Compute-in-Memory (CiM) merge the memory and
processing units, mimicking the human brain. Simultaneously, Hyperdimensional …

In this article, we present a physics-based compact model of flicker noise (low-frequency
noise) in ferroelectric (FE) field-effect transistors (FETs). This model predicts the noise due to …

This article is written on behalf of many colleagues, collaborators, and researchers in the
field of advanced materials who continue to enable and undertake cutting-edge research in …

In this paper, we present a temperature and variability-aware Verilog-A-based compact
model for simulating Ferroelectric FET. The model captures the rich physics of ferroelectric …

Non-volatile ferroelectric field-effect transistor (FeFET) technology is a promising CMOS
process compatible solution for fast, energy efficient on-chip memories that are needed to …

Ferroelectric thin-film transistors (Fe-TFTs) have promising potential for flexible electronics,
memory, and neuromorphic computing applications. Here, we report on a physics-based …