A design concept of phase-separated amorphous nanocomposite thin films is presented that
realizes interfacial resistive switching (RS) in hafnium-oxide-based devices. The films are …

In this paper, we present a review of experimental results examining charged defect
components in the Al 2 O 3/In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system …

Electrical properties of metal-oxide-semiconductor capacitors using atomic layer deposited
HfO 2 on n-type GaAs or In x Ga 1− x As (x= 0.53, 0.30, 0.15) epitaxial layers were …

The electronic properties of the HfO2/MoS2 interface were investigated using multifrequency
capacitance–voltage (C–V) and current–voltage characterization of top-gated MoS2 metal …

High dielectric constant hafnium oxide films were formed by electron beam (e-beam)
evaporation on HF last terminated silicon (100) wafers. We report on the influence of low …

Recently, both electrical and material properties of lanthanum oxide have been found to
significantly improve with a trace amount of nitrogen doping. This work conducted a detailed …

High mobility III-V substrates with high-k oxides are required for device scaling without loss
of channel mobility. Interest has focused on the self-cleaning effect on selected III-V …

We report on experimental observations of room temperature low frequency capacitance-
voltage (CV) behaviour in metal oxide semiconductor (MOS) capacitors incorporating high …

Low-temperature (LT) passivation methods (< 450° C) for decreasing defect densities in the
material combination of silica (SiO x) and silicon (Si) are relevant to develop diverse …

The atomic layer deposition of high dielectric constant oxides like HfO 2 on III-V substrates
such as In 0.53 Ga 0.47 As leads to a poor interface, with the growth of In 0.53 Ga 0.47 As …