Featured Application optical communication, silicon photonics. Abstract Direct epitaxial
growth of III-V heterostructure on CMOS-compatible silicon wafer offers substantial …

Transfer of GaAs layers onto Si by helium and/or hydrogen implantation and wafer bonding
was investigated. The optimum conditions for achieving blistering/splitting only after …

The addition of elevated temperature steps (annealing) during the growth of InAs/GaAs
quantum dot (QD) structures on Si substrates results in significant improvements in their …

The epitaxy of III-V semiconductors on silicon substrates remains challenging because of
lattice parameter and material polarity differences. In this work, we report on the Metal …

The effects of hydrogen plasma passivation on optical and electrical properties of
metalorganic chemical vapor deposition (MOCVD) grown GaAs-on-Si epilayers have been …

Recently, we reported successful growth of high-quality GaAs/Si epilayers by using a very
thin amorphous Si film as buffer layer. In this paper, the impurity properties of this kind of …

The structural and crystalline qualities of GaAs/Si heteroepitaxial layers (heteroepilayers)
were remarkably improved by annealing at temperatures above 900 C, independently of the …

We have shown that the insertion of a GaAs layer prepared by organometallic vapor phase
epitaxy under very high (VH) V–III ratios into a GaAs/Si epitaxial structure improves its …

Stress-reduced GaAs layers were grown on Si substrates with the epitaxial lift-off technique
and regrowth by metalorganic chemical vapor deposition. The GaAs thin film was bonded to …

A stress-released GaAs layer was grown on GaAs bonded to Si substrate with the
combination of epitaxial lift-off technique and regrowth by metalorganic chemical vapor …