Review of silicon carbide power devices and their applications
Silicon carbide (SiC) power devices have been investigated extensively in the past two
decades, and there are many devices commercially available now. Owing to the intrinsic …
decades, and there are many devices commercially available now. Owing to the intrinsic …
Review of silicon carbide processing for power MOSFET
C Langpoklakpam, AC Liu, KH Chu, LH Hsu, WC Lee… - Crystals, 2022 - mdpi.com
Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …
higher thermal conductivity, higher operating frequency, higher operating temperature, and …
[图书][B] Gallium nitride and silicon carbide power devices
BJ Baliga - 2016 - books.google.com
During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …
of gallium nitride and silicon carbide device structures, resulting in experimental …
Current status and perspectives of ultrahigh-voltage SiC power devices
T Kimoto, Y Yonezawa - Materials Science in Semiconductor Processing, 2018 - Elsevier
Recent progress in the SiC material and ultrahigh-voltage devices is reviewed. Regarding
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …
Ultrahigh-voltage SiC pin diodes with improved forward characteristics
Silicon carbide (SiC) pin diodes having five different n--layer (i-layer) thicknesses from 48 to
268 μm are fabricated. The forward characteristics of SiC pin diodes are significantly …
268 μm are fabricated. The forward characteristics of SiC pin diodes are significantly …
A new edge termination technique for high-voltage devices in 4H-SiC–multiple-floating-zone junction termination extension
A new edge termination method, referred to as multiple-floating-zone junction termination
extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC. 4H-SiC PiN rectifiers …
extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC. 4H-SiC PiN rectifiers …
A near ideal edge termination technique for 4500V 4H-SiC devices: The hybrid junction termination extension
This letter presents a new edge termination technique named a hybrid junction termination
extension (Hybrid-JTE), which combines ring-assisted JTE and multiple floating zone JTE …
extension (Hybrid-JTE), which combines ring-assisted JTE and multiple floating zone JTE …
21-kV SiC BJTs with space-modulated junction termination extension
H Miyake, T Okuda, H Niwa, T Kimoto… - IEEE Electron Device …, 2012 - ieeexplore.ieee.org
We report here 20-kV-class small-area (0.035 mm 2) 4H-SiC bipolar junction transistors. We
implemented edge termination techniques featuring two-zone junction termination extension …
implemented edge termination techniques featuring two-zone junction termination extension …
Space-modulated junction termination extension for ultrahigh-voltage pin diodes in 4H-SiC
An edge termination method, referred to as space-modulated junction termination extension
(SMJTE) combined with a mesa structure, is presented for ultrahigh-voltage pin diodes in 4H …
(SMJTE) combined with a mesa structure, is presented for ultrahigh-voltage pin diodes in 4H …
Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability
H Fukushima, S Usami, M Ogura, Y Ando… - Japanese Journal of …, 2019 - iopscience.iop.org
A vertical p–n diode with a simple edge termination structure on a GaN free-standing
substrate is demonstrated. The edge of this device is terminated simply by etching a drift …
substrate is demonstrated. The edge of this device is terminated simply by etching a drift …