The advent of the point-contact transistor is one of the most significant technological
achievements in human history with a profound impact on human civilization during the past …

The electronic and nuclear spin degrees of freedom of donor impurities in silicon form ultra-
coherent two-level systems, that are potentially useful for applications in quantum …

Single‐crystal EPR experiments show that the highly symmetric antiferromagnetic half‐
integer spin triangle [Fe3O (O2CPh) 6 (py) 3] ClO4⋅ py (1, py= pyridine) possesses a ST …

Donor electron spin qubits hosted within nanoscale devices have demonstrated seconds-
long relaxation times at magnetic fields suitable for the operation of spin qubits in silicon of …

Control of electron spin coherence via external fields is fundamental in spintronics. Its
implementation demands a host material that accommodates the desirable but contrasting …

Germanium has emerged as an exceptionally promising material for spintronics and
quantum information applications, with significant fundamental advantages over silicon …

The relaxation times of excited states of arsenic dopant in germanium at cryogenic
temperatures T< 15 K have been experimentally studied by the optical pump-probe method …

This paper presents a systematic study of the charge transport behavior of heavily doped n-
type Ge layers with As and Sb. A nonequilibrium method ion implantation followed by …

Recent work has shown that electron spins in germanium (Ge) nanoscale transistors can be
electrically tuned and have encouraging coherence times. Based on a complete and …

The relaxation rates of lower excited states 1 s (T), 2 p 0, 2 s, 3 p 0, and 2 p±of arsenic
donors in a germanium crystal are calculated upon the interaction with long-wavelength …