First-principles calculations for point defects in solids
Point defects and impurities strongly affect the physical properties of materials and have a
decisive impact on their performance in applications. First-principles calculations have …
decisive impact on their performance in applications. First-principles calculations have …
Fundamentals of zinc oxide as a semiconductor
A Janotti, CG Van de Walle - Reports on progress in physics, 2009 - iopscience.iop.org
In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the
research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate …
research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate …
Defects in zno
MD McCluskey, SJ Jokela - Journal of Applied Physics, 2009 - pubs.aip.org
Zinc oxide (ZnO) is a wide band gap semiconductor with potential applications in
optoelectronics, transparent electronics, and spintronics. The high efficiency of UV emission …
optoelectronics, transparent electronics, and spintronics. The high efficiency of UV emission …
Hydrogenated cation vacancies in semiconducting oxides
Using first-principles calculations we have studied the electronic and structural properties of
cation vacancies and their complexes with hydrogen impurities in SnO 2, In 2 O 3 and β-Ga …
cation vacancies and their complexes with hydrogen impurities in SnO 2, In 2 O 3 and β-Ga …
Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation
By combining results from positron annihilation and photoluminescence spectroscopy with
data from Hall effect measurements, the characteristic deep level emission centered at∼ …
data from Hall effect measurements, the characteristic deep level emission centered at∼ …
Electrical characterization of Au/n-ZnO Schottky contacts on n-Si
Wide band gap semiconducting layer of n-type ZnO thin film was fabricated on n-type Si
substrate with electrochemical deposition technique and the current–voltage (I–V) and the …
substrate with electrochemical deposition technique and the current–voltage (I–V) and the …
Efficacy of ion implantation in zinc oxide for optoelectronic applications: A review
Unlike the majority of the silicon-based electronic devices, optoelectronic devices are
predominantly made using III–V and II–VI semiconductor compounds and their alloys …
predominantly made using III–V and II–VI semiconductor compounds and their alloys …
Defect luminescence and its mediated physical properties in ZnO
ZnO has promising potential applications in optoelectronic industry, attributed to its direct
wide band gap (3.37 eV) and high exciton binding energy (60 meV). Optoelectronic …
wide band gap (3.37 eV) and high exciton binding energy (60 meV). Optoelectronic …
Laser molecular beam epitaxy of ZnO thin films and heterostructures
We report on the growth of epitaxial ZnO thin films and ZnO-based heterostructures on
sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent …
sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent …
Hydrogen in oxide semiconductors
MD McCluskey, MC Tarun… - Journal of Materials …, 2012 - cambridge.org
Oxide semiconductors exhibit a range of physical properties and have potential optical,
electronic, and energy applications. Transparent conducting oxides (TCOs) are currently …
electronic, and energy applications. Transparent conducting oxides (TCOs) are currently …