First-principles calculations for point defects in solids

C Freysoldt, B Grabowski, T Hickel, J Neugebauer… - Reviews of modern …, 2014 - APS
Point defects and impurities strongly affect the physical properties of materials and have a
decisive impact on their performance in applications. First-principles calculations have …

Fundamentals of zinc oxide as a semiconductor

A Janotti, CG Van de Walle - Reports on progress in physics, 2009 - iopscience.iop.org
In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the
research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate …

Defects in zno

MD McCluskey, SJ Jokela - Journal of Applied Physics, 2009 - pubs.aip.org
Zinc oxide (ZnO) is a wide band gap semiconductor with potential applications in
optoelectronics, transparent electronics, and spintronics. The high efficiency of UV emission …

Hydrogenated cation vacancies in semiconducting oxides

JB Varley, H Peelaers, A Janotti… - Journal of Physics …, 2011 - iopscience.iop.org
Using first-principles calculations we have studied the electronic and structural properties of
cation vacancies and their complexes with hydrogen impurities in SnO 2, In 2 O 3 and β-Ga …

Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation

KE Knutsen, A Galeckas, A Zubiaga, F Tuomisto… - Physical Review B …, 2012 - APS
By combining results from positron annihilation and photoluminescence spectroscopy with
data from Hall effect measurements, the characteristic deep level emission centered at∼ …

Electrical characterization of Au/n-ZnO Schottky contacts on n-Si

Ş Aydoğan, K Çınar, H Asıl, C Coşkun… - Journal of Alloys and …, 2009 - Elsevier
Wide band gap semiconducting layer of n-type ZnO thin film was fabricated on n-type Si
substrate with electrochemical deposition technique and the current–voltage (I–V) and the …

Efficacy of ion implantation in zinc oxide for optoelectronic applications: A review

A Das, D Basak - ACS Applied Electronic Materials, 2021 - ACS Publications
Unlike the majority of the silicon-based electronic devices, optoelectronic devices are
predominantly made using III–V and II–VI semiconductor compounds and their alloys …

Defect luminescence and its mediated physical properties in ZnO

J Lv, C Li, Z Chai - Journal of Luminescence, 2019 - Elsevier
ZnO has promising potential applications in optoelectronic industry, attributed to its direct
wide band gap (3.37 eV) and high exciton binding energy (60 meV). Optoelectronic …

Laser molecular beam epitaxy of ZnO thin films and heterostructures

M Opel, S Geprägs, M Althammer… - Journal of Physics D …, 2013 - iopscience.iop.org
We report on the growth of epitaxial ZnO thin films and ZnO-based heterostructures on
sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent …

Hydrogen in oxide semiconductors

MD McCluskey, MC Tarun… - Journal of Materials …, 2012 - cambridge.org
Oxide semiconductors exhibit a range of physical properties and have potential optical,
electronic, and energy applications. Transparent conducting oxides (TCOs) are currently …