Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies
The lighting industry undergoes a revolutionizing transformation with the introduction of III-
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …
Efficiency models for GaN-based light-emitting diodes: Status and challenges
J Piprek - Materials, 2020 - mdpi.com
Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing
various applications in lighting, displays, biotechnology, and other fields. However, their …
various applications in lighting, displays, biotechnology, and other fields. However, their …
Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices
Group III-nitride semiconductor materials especially AlGaN are key-emerging candidates for
the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics …
the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics …
[HTML][HTML] Effect of low hole mobility on the efficiency droop of AlGaN nanowire deep ultraviolet light emitting diodes
Compared to the extensive studies on the efficiency droop of InGaN visible light emitting
diodes (LEDs), the efficiency droop of AlGaN deep ultraviolet (UV) LEDs is much less …
diodes (LEDs), the efficiency droop of AlGaN deep ultraviolet (UV) LEDs is much less …
Enhanced light extraction efficiency via double nano-pattern arrays for high-efficiency deep UV LEDs
Z Zheng, Q Chen, J Dai, A Wang, R Liang… - Optics & Laser …, 2021 - Elsevier
This work reports on the packaging structure of double-layer nano-pattern arrays (NPAs) for
AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs), which can significantly …
AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs), which can significantly …
Development of highly efficient ultraviolet LEDs on hybrid patterned sapphire substrates
A hybrid patterned sapphire substrate (HPSS) aiming to achieve high-quality Al (Ga) N
epilayers for the development of GaN-based ultraviolet light-emitting diodes (UV LEDs) has …
epilayers for the development of GaN-based ultraviolet light-emitting diodes (UV LEDs) has …
Deep ultraviolet light-emitting diodes based on a well-ordered AlGaN nanorod array
The nanorod structure is an alternative scheme to develop high-efficiency deep ultraviolet
light-emitting diodes (DUV LEDs). In this paper, we first report the electrically injected 274 …
light-emitting diodes (DUV LEDs). In this paper, we first report the electrically injected 274 …
AlGaN nanowire deep ultraviolet LEDs with polarization enhanced tunnel junction and p-AlGaN layer by molecular beam epitaxy
MF Vafadar, S Zhao - Journal of Vacuum Science & Technology B, 2022 - pubs.aip.org
In this work, we report the growth, fabrication, and characterization of aluminum gallium
nitride (AlGaN) nanowire deep ultraviolet light-emitting diodes with a polarization …
nitride (AlGaN) nanowire deep ultraviolet light-emitting diodes with a polarization …
Inverse tapered AlGaN micropillar and nanowire LEDs for improved light extraction efficiency at 270 nm
Deep-ultraviolet (DUV) light emitting diodes (LEDs) show great potential in a wide range of
applications, but suffer from poor external quantum efficiencies (EQEs) when compared to …
applications, but suffer from poor external quantum efficiencies (EQEs) when compared to …
Compositionally graded AlGaN hole source layer for deep-ultraviolet nanowire light-emitting diode without electron blocking layer
The electron blocking layer (EBL) plays a vital role in blocking the electron overflow from an
active region in the AlGaN-based deep-ultraviolet light-emitting diode (DUV-LED). Besides …
active region in the AlGaN-based deep-ultraviolet light-emitting diode (DUV-LED). Besides …