A paradigm shift in patterning foundation from frequency multiplication to edge-placement accuracy: a novel processing solution by selective etching and alternating …
T Han, H Liu, Y Chen - Alternative Lithographic Technologies …, 2016 - spiedigitallibrary.org
Overlay errors, cut/block and line/space critical-dimension (CD) variations are the major
sources of the edge-placement errors (EPE) in the cut/block patterning processes of …
sources of the edge-placement errors (EPE) in the cut/block patterning processes of …
Process development and edge-placement yield modeling of alternating-material self-aligned multiple patterning
T Han, H Liu, Y Chen - Journal of Micro/Nanolithography …, 2016 - spiedigitallibrary.org
We propose and discuss a modular technology to reduce the edge-placement-error effect by
combining selective etching and alternating-material (dual-material) self-aligned multiple …
combining selective etching and alternating-material (dual-material) self-aligned multiple …
Breaking through 1D layout limitations and regaining 2D design freedom Part I: 2D layout decomposition and stitching techniques for hybrid optical and self-aligned …
H Liu, J Zhou, Y Chen - Design-Process-Technology Co …, 2015 - spiedigitallibrary.org
To break through 1-D IC layout limitations, we develop computationally efficient 2-D layout
decomposition and stitching techniques which combine the optical and self-aligned multiple …
decomposition and stitching techniques which combine the optical and self-aligned multiple …