Recent advances in telecommunications avalanche photodiodes
JC Campbell - Journal of Lightwave Technology, 2007 - opg.optica.org
For high-bit-rate long-haul fiber optic communications, the avalanche photodiode (APD) is
frequently the photodetector of choice owing to its internal gain, which provides a sensitivity …
frequently the photodetector of choice owing to its internal gain, which provides a sensitivity …
Active area uniformity of InGaAs/InP single-photon avalanche diodes
We present a detailed characterization of the active area uniformity of InGaAs/InP Single-
Photon Avalanche Diodes (SPADs) from two different design iterations. Nonuniformity of the …
Photon Avalanche Diodes (SPADs) from two different design iterations. Nonuniformity of the …
Advances in photodetectors
JC Campbell - Optical Fiber Telecommunications VA, 2008 - Elsevier
Publisher Summary Numerous improvements and breakthroughs in photodetector and
receiver technologies have facilitated the evolution of fiber optic digital transmission systems …
receiver technologies have facilitated the evolution of fiber optic digital transmission systems …
Self-quenching InGaAs/InP single photon avalanche detector utilizing zinc diffusion rings
InGaAs single photon avalanche detectors have previously been fabricated with a negative-
feedback mechanism, which allows for free-running Geiger-mode operation and improves …
feedback mechanism, which allows for free-running Geiger-mode operation and improves …
Optimization of 10-Gb/s long-wavelength floating guard ring InGaAs-InP avalanche photodiodes
R Wei, JC Dries, H Wang, ML Lange… - IEEE Photonics …, 2002 - ieeexplore.ieee.org
We demonstrate long-wavelength (/spl lambda/= 1.3 and 1.5 μm) high-speed (10 Gb/s)
InGaAs-InP separate absorption-grading-and-multiplication region avalanche photodiodes …
InGaAs-InP separate absorption-grading-and-multiplication region avalanche photodiodes …
Heavy-ion induced single-event transients in high-speed InP-InGaAs avalanche photodiodes
Proton-induced heavy ions ion fluxes in InP/In/sub 0.53/Ga/sub 0.47/As avalanche
photodiodes (APD) used in communication systems can induce single-event transients …
photodiodes (APD) used in communication systems can induce single-event transients …
Quantitative analysis of edge breakdown effect of Geiger mode avalanche photo-diodes utilizing optical probe scanning method
T He, X Yang, Y Tang, R Wang… - … Science and Technology, 2022 - iopscience.iop.org
Abstract Planar InGaAs/InP avalanche photo diodes (APDs) are preferred single-photon
detectors in the near-infrared region. They are usually fabricated using the double-diffusion …
detectors in the near-infrared region. They are usually fabricated using the double-diffusion …
State of the art high-speed photodetectors for microwave photonics application
S Malyshev, A Chizh - 15th International Conference on …, 2004 - ieeexplore.ieee.org
The paper reviews the recent advances in high-speed photodetectors based on A/sup
3/B/sup 5/compounds for microwave photonics application. The two main trends in the …
3/B/sup 5/compounds for microwave photonics application. The two main trends in the …
Edge gain suppression of a planar-type InGaAs-InP avalanche photodiodes with thin multiplication layers for 10-Gb/s applications
Edge-breakdown free InP-InGaAs avalanche photodiodes (APDs) for 10-Gb/s operation
were fabricated. Two-dimensional current profiles were measured to investigate the edge …
were fabricated. Two-dimensional current profiles were measured to investigate the edge …
A 10-Gb/s planar InGaAs/InP avalanche photodiode with a thin multiplication layer fabricated by using recess-etching and single-diffusion processes
S Hwang, J Shim, K Yoo - Journal of the Korean Physical Society, 2006 - osti.gov
We present a planar InGaAs/InP separated absorption, grading, charge, and multiplication
(SAGCM) avalanche photodiode (APD) with a thin multiplication layer of 0.2 {mu} m in …
(SAGCM) avalanche photodiode (APD) with a thin multiplication layer of 0.2 {mu} m in …