Growth and properties of InGaAs nanowires on silicon
G Koblmüller, G Abstreiter - physica status solidi (RRL)–Rapid …, 2014 - Wiley Online Library
Free‐standing ternary InGaAs nanowires (NW) are at the core of intense investigations due
to their integration capabilities on silicon (Si) for next‐generation photovoltaics, integrated …
to their integration capabilities on silicon (Si) for next‐generation photovoltaics, integrated …
Nanowire photonics toward wide wavelength range and subwavelength confinement
Semiconductor nanowires have attracted much attention for photonic applications,
especially for lasers, because of their availability in a wide variety of materials and …
especially for lasers, because of their availability in a wide variety of materials and …
First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors
We employ first-principles techniques tailored to properly describe semiconductors
(semilocal exchange potential added to the exchange-correlation functional), to obtain the …
(semilocal exchange potential added to the exchange-correlation functional), to obtain the …
Enhanced luminescence properties of InAs–InAsP core–shell nanowires
Utilizing narrow band gap nanowire (NW) materials to extend nanophotonic applications to
the mid-infrared spectral region (> 2–3 μm) is highly attractive, however, progress has been …
the mid-infrared spectral region (> 2–3 μm) is highly attractive, however, progress has been …
Bandgap energy of wurtzite InAs nanowires
InAs nanowires (NWs) have been grown on semi-insulating InAs (111) B substrates by metal–
organic chemical vapor deposition catalyzed by 50, 100, and 150 nm-sized Au particles. The …
organic chemical vapor deposition catalyzed by 50, 100, and 150 nm-sized Au particles. The …
Mid-infrared lasing of single wurtzite InAs nanowire
Mid-infrared (MIR) photonics is a developing technology for sensing materials by their
characteristic MIR absorptions. Since silicon (Si) is a low-loss material in most of the MIR …
characteristic MIR absorptions. Since silicon (Si) is a low-loss material in most of the MIR …
Realistic multiband approach from ab initio and spin-orbit coupling effects of InAs and InP in wurtzite phase
Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under
certain growth conditions to favor the appearance of the wurtzite crystal phase. Despite …
certain growth conditions to favor the appearance of the wurtzite crystal phase. Despite …
Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy
For the first time, we report a complete control of crystal structure in InAs1–x Sb x NWs by
tuning the antimony (Sb) composition. This claim is substantiated by high-resolution …
tuning the antimony (Sb) composition. This claim is substantiated by high-resolution …
Role of microstructure on optical properties in high-uniformity InGaAs nanowire arrays: Evidence of a wider wurtzite band gap
S Morkötter, S Funk, M Liang, M Döblinger… - Physical Review B …, 2013 - APS
Accessing fundamental structure-property correlations in ternary semiconductor nanowires
is a challenging endeavor often limited by large compositional inhomogeneities. Here, we …
is a challenging endeavor often limited by large compositional inhomogeneities. Here, we …
Non-Uniformly Strained Core–Shell InAs/InP Nanowires for Mid-Infrared Photonic Applications
V Fedorov, M Vinnichenko, R Ustimenko… - ACS Applied Nano …, 2023 - ACS Publications
Crystal phase and strain engineering in epitaxial nanowire (NW) heterostructures provide a
widely tunable functionality for future nanoscale light emitters and photodetectors. Thus …
widely tunable functionality for future nanoscale light emitters and photodetectors. Thus …