An overview of III-Nitride based laser diodes (LDs) is presented focusing on the materials
challenges in each phase of device development. We discuss early breakthroughs leading …

US9077151B2 - Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts
less than +/-15 degrees in the C-direction - Google Patents US9077151B2 - Semi-polar III-nitride …

This paper reviews the development of the InGaN-based green laser diodes on semipolar
GaN substrates, especially focusing on $(20\bar {2} 1) $ plane. The reduction of …

Room-temperature continuous-wave operation of 520 nm InGaN-based green laser diodes
on semi-polar {2021} GaN substrates was demonstrated. A threshold current of 95 mA …

We demonstrate electrically driven InGaN based laser diodes (LDs), with a simple AlGaN-
cladding-free epitaxial structure, grown on semipolar (2021) GaN substrates. The devices …

Nonpolar GaN-based light emitting diodes (LEDs) and laser diodes (LDs) show great
promise. However, long wavelength emitters (λ> 500 nm) have reduced performance in …

Two-dimensional optical waveguide mode simulations have been employed to investigate
the optimized device structures for ridge-waveguide (Al, In, Ga) N-based green (520 nm) …

Abstract The growth of InGaN/AlGaN multiple quantum wells (MQWs) structures is highly
effective for realizing high quality semipolar (2021) active regions for green light emitting …

Some research groups have realized green laser diodes (LDs) using InGaN-based nitride
semiconductors. However, the performances of their devices, in particular wall-plug …

We demonstrate AlGaN-cladding-free m-plane InGaN/GaN laser diodes with threshold
current densities that are comparable to state-of-the-art c-plane InGaN/GaN laser diodes …