Scaling magnetic tunnel junction down to single-digit nanometers—Challenges and prospects
Magnetic tunnel junction (MTJ), a spintronics device, has been intensively developed in the
past couple of decades because of its high potential in terms of non-volatility, fast operation …
past couple of decades because of its high potential in terms of non-volatility, fast operation …
Critical role of post-annealing in Ta/Co60Fe20B20/Ta thin film heterostructures: Structural, static, and dynamic properties
Abstract The Co 60 Fe 20 B 20 (CoFeB) alloy has been recognized as a potential material
system in spintronic devices. The post-annealing treatment of the CoFeB based …
system in spintronic devices. The post-annealing treatment of the CoFeB based …
[HTML][HTML] Sub-nanosecond spin-torque switching of perpendicular magnetic tunnel junction nanopillars at cryogenic temperatures
Spin-transfer magnetic random access memory devices are of significant interest for
cryogenic computing systems where a persistent, fast, low-energy consuming, and …
cryogenic computing systems where a persistent, fast, low-energy consuming, and …
[HTML][HTML] Perspectives on spintronics technology development: Giant magnetoresistance to spin transfer torque magnetic random access memory
M Pinarbasi, AD Kent - APL Materials, 2022 - pubs.aip.org
The discovery of the giant magnetoresistance (GMR) effect in 1988 started a new field called
spintronics and was recognized with the 2007 Nobel Prize in Physics, which was awarded to …
spintronics and was recognized with the 2007 Nobel Prize in Physics, which was awarded to …
Metrology and metrics for spin-transfer-torque switched magnetic tunnel junctions in memory applications
JZ Sun, C Safranski - Journal of Magnetism and Magnetic Materials, 2022 - Elsevier
A spin-transfer torque (STT) switched magnetic tunnel junction (MTJ) enables modern
magnetic random access memory (MRAM). Optimization of perpendicularly magnetized MTJ …
magnetic random access memory (MRAM). Optimization of perpendicularly magnetized MTJ …
Ultrathin perpendicular free layers for lowering the switching current in STT-MRAM
TS Santos, G Mihajlović, N Smith, JL Li… - Journal of Applied …, 2020 - pubs.aip.org
The critical current density J c 0 required for switching the magnetization of the free layer
(FL) in a spin-transfer torque magnetic random access memory (MRAM) cell is proportional …
(FL) in a spin-transfer torque magnetic random access memory (MRAM) cell is proportional …
Key points in the determination of the interfacial Dzyaloshinskii–Moriya interaction from asymmetric bubble domain expansion
Different models have been used to evaluate the interfacial Dzyaloshinskii–Moriya
interaction (DMI) from the asymmetric bubble expansion method using magneto-optics …
interaction (DMI) from the asymmetric bubble expansion method using magneto-optics …
High temperature stability in few atomic layer MoS 2 based thin film heterostructures: structural, static and dynamic magnetization properties
Layered transition metal dichalcogenides (TMDs) have shown commendable properties for
spintronic applications. From the device perspective, the structural quality of the TMD as well …
spintronic applications. From the device perspective, the structural quality of the TMD as well …
Scaling of Dzyaloshinskii-Moriya interaction with magnetization in Pt/Co (Fe) B/Ir multilayers
Magnetic multilayers with perpendicular anisotropy and an interfacial Dzyaloshinskii-Moriya
interaction (DMI) contain chiral domain walls and skyrmions that are promising for …
interaction (DMI) contain chiral domain walls and skyrmions that are promising for …
Modeling methodology for thermal stability factor in spin transfer torque magneto-resistive random access memories
A Talapatra, M Weisheit, J Müller… - … on Electron Devices, 2024 - ieeexplore.ieee.org
This article presents systematic pathways to model the thermal stability factor for magneto-
resistive random access memories using atomistic simulations. The model involves …
resistive random access memories using atomistic simulations. The model involves …