3-D integration and through-silicon vias in MEMS and microsensors
Z Wang - Journal of Microelectromechanical Systems, 2015 - ieeexplore.ieee.org
After two decades of intensive development, 3-D integration has proven invaluable for
allowing integrated circuits to adhere to Moore's Law without needing to continuously shrink …
allowing integrated circuits to adhere to Moore's Law without needing to continuously shrink …
Fabrication and interfacing of nanochannel devices for single-molecule studies
HT Hoang, IM Segers-Nolten… - Journal of …, 2009 - iopscience.iop.org
Nanochannel devices have been fabricated using standard micromachining techniques
such as optical lithography, deposition and etching. 1D nanochannels with thin glass …
such as optical lithography, deposition and etching. 1D nanochannels with thin glass …
Inkjet-printed paper-based substrate-integrated waveguide (SIW) components and antennas
This paper presents a novel technology for the implementation of substrate-integrated
waveguide (SIW) structures, based on a paper substrate and realized by an inkjet-printing …
waveguide (SIW) structures, based on a paper substrate and realized by an inkjet-printing …
Integrated chip-size antennas for wireless microsystems: Fabrication and design considerations
This paper reports on fabrication and design considerations of an integrated folded shorted-
patch chip-size antenna for applications in short-range wireless microsystems and operating …
patch chip-size antenna for applications in short-range wireless microsystems and operating …
Fabrication of silicon based through-wafer interconnects for advanced chip scale packaging
F Ji, S Leppävuori, I Luusua, K Henttinen… - Sensors and Actuators A …, 2008 - Elsevier
This paper presents a fabrication method to achieve through-wafer interconnects (TWIs) by
etching, filling and grinding in sequence. Based on this method, advanced chip scale …
etching, filling and grinding in sequence. Based on this method, advanced chip scale …
Thermo-mechanical characterization of copper through-wafer interconnects
PA Miranda, AJ Moll - 56th Electronic Components and …, 2006 - ieeexplore.ieee.org
Copper through wafer interconnects (TWIs) have become a viable solution to providing
interconnectivity between stacked die. In a world where minimizing chip real estate while …
interconnectivity between stacked die. In a world where minimizing chip real estate while …
A metallic buried interconnect process for through-wafer interconnection
In this paper, we present the design, fabrication process and experimental results of
electroplated metal interconnects buried at the bottom of deep silicon trenches with vertical …
electroplated metal interconnects buried at the bottom of deep silicon trenches with vertical …
Materials and Processing of TSV
This chapter introduces the critical steps involved in fabricating TSVs and associated
materials. The fabrication steps for TSVs begin with etching of high aspect ratio trenches in …
materials. The fabrication steps for TSVs begin with etching of high aspect ratio trenches in …
Electroplated metal buried interconnect and through-wafer metal-filled via technology for high-power integrated electronics
In this paper, we present the design, fabrication process, and experimental results of an
electroplated metal buried interconnect and through-wafer via technology suitable for …
electroplated metal buried interconnect and through-wafer via technology suitable for …
Through wafer interconnection technologies for advanced electronic devices
M de Samber, T Nellissen… - Proceedings of 6th …, 2004 - ieeexplore.ieee.org
There is a need for miniaturizing electronic components such as ICs and modules that are
used in portable devices like cellular phones and PDAs. Miniaturization not only results in a …
used in portable devices like cellular phones and PDAs. Miniaturization not only results in a …