3-D integration and through-silicon vias in MEMS and microsensors

Z Wang - Journal of Microelectromechanical Systems, 2015 - ieeexplore.ieee.org
After two decades of intensive development, 3-D integration has proven invaluable for
allowing integrated circuits to adhere to Moore's Law without needing to continuously shrink …

Fabrication and interfacing of nanochannel devices for single-molecule studies

HT Hoang, IM Segers-Nolten… - Journal of …, 2009 - iopscience.iop.org
Nanochannel devices have been fabricated using standard micromachining techniques
such as optical lithography, deposition and etching. 1D nanochannels with thin glass …

Inkjet-printed paper-based substrate-integrated waveguide (SIW) components and antennas

R Moro, S Kim, M Bozzi, M Tentzeris - International Journal of …, 2013 - cambridge.org
This paper presents a novel technology for the implementation of substrate-integrated
waveguide (SIW) structures, based on a paper substrate and realized by an inkjet-printing …

Integrated chip-size antennas for wireless microsystems: Fabrication and design considerations

PM Mendes, A Polyakov, M Bartek, JN Burghartz… - Sensors and Actuators A …, 2006 - Elsevier
This paper reports on fabrication and design considerations of an integrated folded shorted-
patch chip-size antenna for applications in short-range wireless microsystems and operating …

Fabrication of silicon based through-wafer interconnects for advanced chip scale packaging

F Ji, S Leppävuori, I Luusua, K Henttinen… - Sensors and Actuators A …, 2008 - Elsevier
This paper presents a fabrication method to achieve through-wafer interconnects (TWIs) by
etching, filling and grinding in sequence. Based on this method, advanced chip scale …

Thermo-mechanical characterization of copper through-wafer interconnects

PA Miranda, AJ Moll - 56th Electronic Components and …, 2006 - ieeexplore.ieee.org
Copper through wafer interconnects (TWIs) have become a viable solution to providing
interconnectivity between stacked die. In a world where minimizing chip real estate while …

A metallic buried interconnect process for through-wafer interconnection

CH Ji, F Herrault, MG Allen - Journal of Micromechanics and …, 2008 - iopscience.iop.org
In this paper, we present the design, fabrication process and experimental results of
electroplated metal interconnects buried at the bottom of deep silicon trenches with vertical …

Materials and Processing of TSV

P Kumar, I Dutta, Z Huang, P Conway - 3D Microelectronic Packaging …, 2021 - Springer
This chapter introduces the critical steps involved in fabricating TSVs and associated
materials. The fabrication steps for TSVs begin with etching of high aspect ratio trenches in …

Electroplated metal buried interconnect and through-wafer metal-filled via technology for high-power integrated electronics

CH Ji, F Herrault, P Hopper, P Smeys… - IEEE transactions on …, 2009 - ieeexplore.ieee.org
In this paper, we present the design, fabrication process, and experimental results of an
electroplated metal buried interconnect and through-wafer via technology suitable for …

Through wafer interconnection technologies for advanced electronic devices

M de Samber, T Nellissen… - Proceedings of 6th …, 2004 - ieeexplore.ieee.org
There is a need for miniaturizing electronic components such as ICs and modules that are
used in portable devices like cellular phones and PDAs. Miniaturization not only results in a …