Spintronics: Fundamentals and applications
Spintronics, or spin electronics, involves the study of active control and manipulation of spin
degrees of freedom in solid-state systems. This article reviews the current status of this …
degrees of freedom in solid-state systems. This article reviews the current status of this …
Universal intrinsic spin Hall effect
We describe a new effect in semiconductor spintronics that leads to dissipationless spin
currents in paramagnetic spin-orbit coupled systems. We argue that in a high-mobility two …
currents in paramagnetic spin-orbit coupled systems. We argue that in a high-mobility two …
[图书][B] Handbook of nanoscience, engineering, and technology
Nanotechnology, science, and engineering spearhead the 21st century revolution that is
leading to fundamental breakthroughs in the way materials, devices, and systems are …
leading to fundamental breakthroughs in the way materials, devices, and systems are …
Spin diffusion and injection in semiconductor structures: Electric field effects
In semiconductor spintronic devices, the semiconductor is usually lightly doped and
nondegenerate, and moderate electric fields can dominate the carrier motion. We recently …
nondegenerate, and moderate electric fields can dominate the carrier motion. We recently …
Magnetic Domain Structure and Magnetic Anisotropy in
U Welp, VK Vlasko-Vlasov, X Liu, JK Furdyna… - Physical review …, 2003 - APS
Large, well-defined magnetic domains, on the scale of hundreds of micrometers, are
observed in G a 1-x M nx A s epilayers using a high-resolution magneto-optical imaging …
observed in G a 1-x M nx A s epilayers using a high-resolution magneto-optical imaging …
Voltage-controlled spin selection in a magnetic resonant tunneling diode
We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Z n, M n,
B e) S e material system, containing dilute magnetic material in the quantum well, and …
B e) S e material system, containing dilute magnetic material in the quantum well, and …
Diffuse transport and spin accumulation in a Rashba two-dimensional electron gas
J Inoue, GEW Bauer, LW Molenkamp - Physical Review B, 2003 - APS
Abstract The Rashba Hamiltonian describes the splitting of the conduction band as a result
of spin-orbit coupling in the presence of an asymmetric confinement potential and is …
of spin-orbit coupling in the presence of an asymmetric confinement potential and is …
Electrical detection of spin accumulation at a ferromagnet-semiconductor interface
We show that the accumulation of spin-polarized electrons at a forward-biased Schottky
tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation …
tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation …
Electric-field dependent spin diffusion and spin injection into semiconductors
We derive a drift-diffusion equation for spin polarization in semiconductors by consistently
taking into account electric-field effects and nondegenerate electron statistics. We identify a …
taking into account electric-field effects and nondegenerate electron statistics. We identify a …
Spin injection into semiconductors, physics and experiments
G Schmidt, LW Molenkamp - Semiconductor science and …, 2002 - iopscience.iop.org
In this paper we review and extend our modelling of the physics governing electrical spin
injection into non-magnetic semiconductors. A critical evaluation is given of several …
injection into non-magnetic semiconductors. A critical evaluation is given of several …