Toward adequate operation of amorphous oxide thin-film transistors for low-concentration gas detection
We suggest the use of a thin-film transistor (TFT) composed of amorphous InGaZnO (a-
IGZO) as a channel and a sensing layer for low-concentration NO2 gas detection. Although …
IGZO) as a channel and a sensing layer for low-concentration NO2 gas detection. Although …
Investigation on the change of the performance of Si-Zn-Sn-O thin film transistors under negative bias temperature stress depending on the channel thickness
JY Hwang, SY Lee - Solid-State Electronics, 2019 - Elsevier
Amorphous silicon doped zinc tin oxide (a-SZTO) thin film transistors (TFTs) have been
fabricated by RF-magnetron sputtering at room temperature. The effect of different channel …
fabricated by RF-magnetron sputtering at room temperature. The effect of different channel …
Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors
BH Lee, SY Hong, DH Kim, S Kim, HI Kwon… - Physica B: Condensed …, 2019 - Elsevier
High-performance amorphous SiZnSnO thin-film transistors (a-SZTO TFTs) were fabricated
using radio-frequency (RF) magnetron sputtering. The noise spectral density of a-SZTO …
using radio-frequency (RF) magnetron sputtering. The noise spectral density of a-SZTO …
Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition
SY Na, SM Yoon - RSC advances, 2018 - pubs.rsc.org
Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels
prepared by atomic-layer deposition are presented. The Al concentration was fixed at 2.6 …
prepared by atomic-layer deposition are presented. The Al concentration was fixed at 2.6 …