Purpose The purpose of this paper is to analyze and optimize the formation of field-effect
heterotransistors using analytical approach. The approach makes it possible to analyze …

In this paper, we propose and analyze a graphene tunnelling field effect transistor (GTFET)
with a gapped graphene in the channel and gapless graphene in the source/drain regions …

The structure and main parameters of field-effect transistors (FETs) based on gapless
graphene (Gr) and its derivatives with semiconducting properties, transistors on flexible …

We propose a concept for a graphene tunnel field-effect transistor. The main idea is based
on the use of two graphene electrodes with zigzag termination divided by a narrow gap …

Device architectures that incorporate graphene to realize detection of electromagnetic
radiation typically utilize the direct absorbance of radiation by graphene. This limits their …

Graphene is a flat, single layer of carbon atoms structured in a hexagonal lattice. It has
outstanding electrical, thermal, mechanical and chemical properties. All of these enabled a …

The tunneling current in a junction formed by graphene half-planes and bilayer graphene
with two possible packing types and two possible orientations of the crystal lattice is …

In the present work, modified Datta and Das Type silicon based lateral spin-Field Effect
Transistor (MDD Type s-FET) is presented with alumina as tunnel contact. The insertion of …

Field-effect graphene transistors (FGTs) based on single-layer graphene using the
developed simplified combined self-consistent model are simulated. It is used to compare …

We proposed a scheme of armchair graphene nanoribbon (AGNR) based tunnel field-effect
transistor (TFET). The simulated device consists of two (AGNR) electrodes with zigzag …