SIESTA was developed as an approach to compute the electronic properties and perform
atomistic simulations of complex materials from first principles. Very large systems, with an …

We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and Al-
doped 3C-SiC. Both 3C-SiC: B and 6H-SiC: B reveal type-I superconductivity with a critical …

Ab initio supercell calculations have been carried out to investigate clusters of carbon
interstitials in 3C-and 4H-SiC. Based on the calculated formation energies, the complex …

We report superconductivity in heavily boron-doped bulk silicon carbide related to the
diamond structure. The compound exhibits zero resistivity and diamagnetic susceptibility …

Boron-doped SiC powders were synthesized from the Si/C/B system in a nitrogen
atmosphere by combustion synthesis. Results showed that boron benefited the …

The interstitial and vacancy mediated boron diffusion in silicon carbide is investigated with
an ab initio method. The boron interstitials in p-type and n-type materials are found to be far …

B-doped SiC powders were synthesized at different temperatures by sol–gel. Results show
that C-enriched β-SiC is generated completely when the temperature is 1700° C and SiC (B) …

The discoveries of superconductivity in the heavily-boron doped semiconductors diamond
(C: B) in 2004 [Ekimov, Nature (London) 428, 542 (2004) NATUAS 10.1038/nature02449] …

Diffusion of C 13 and Si 30 in silicon carbide was performed with isotopically enriched 4 H-
Si 28 C 12∕ nat SiC heterostructures which were grown by chemical vapor phase epitaxy …

As a semiconductor with a wide bandgap, 4H silicon carbide (4H-SiC) has considerable
potential for high-temperature and high-power devices. It is widely established that p-type …