A colloidal silica-based slurry (3–10 wt%) containing H 2 O 2 (1 wt%) and citric acid (50 mM)
was found to polish chemical vapor-deposited (CVD) cobalt (Co) films with removal rates …

Copper interconnects for the sub-22 nm technology nodes are designed to have diffusion
barriers/liners of significantly reduced thickness and unconventional materials. The …

This work describes the dissolution and corrosion of chemical vapor deposited (CVD) Co
films determined using aqueous mixtures of H 2 O 2, oxalic acid (OA) and nicotinic acid (NA) …

With the aggressive scaling of integrated circuits, ruthenium has been proposed as the next
generation barrier material to replace the conventional bilayer of tantalum and tantalum …

Ruthenium (Ru) has been selected as the next-generation barrier material for copper (Cu)
interconnects due to its excellent electrical properties, high breakdown voltage, low leakage …

Defect-control is a critical requirement for chemical mechanical planarization (CMP) of the
ultrathin diffusion barriers considered for the new Cu-interconnects. The challenging task of …

The synergistic and competitive relationship of glycine and benzotriazole (BTA) in a
peroxide-based weakly alkaline slurry during the copper chemical mechanical planarization …

Co, a candidate material for barrier and capping layers in 10 nm and smaller Cu
interconnects, is prone to corrosion and galvanic corrosion during chemical mechanical …

Chemical–mechanical planarization (CMP) is used to smoothen the topographies of a rough
surface by combining several functions of tribology (friction, lubrication), chemistry, and …

This paper focuses on the study of micro-galvanic corrosion of the Cu/Ru couple in KIO 4
solution. Practical nobility across the Cu/Ru interface was evaluated by Volta potential …