We present an atomistic description of the electronic and optical properties of In 0.25 Ga
0.75 N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy …

We present a theory of local electric polarization in crystalline solids and apply it to study the
case of wurtzite group-III nitrides. We show that a local value of the electric polarization …

Light emitters based on the semiconductor alloy aluminum gallium nitride [(Al, Ga) N] have
gained significant attention in recent years due to their potential for a wide range of …

We present an atomistic theoretical study of the temperature dependence of the competition
between Auger and radiative recombination in c-plane (In, Ga) N/GaN quantum wells with …

We present a detailed theoretical study of the band gap bowing of wurtzite AlGaN alloys
over the full composition range. Our theoretical framework is based on an atomistic tight …

In this work, we present a detailed analysis of the interplay of Coulomb effects and different
mechanisms that can lead to carrier-localization effects in c-plane (In, Ga) N/Ga N quantum …

We present here a combined experimental and theoretical analysis of the radiative
recombination lifetime in a‐plane (11 0) InGaN/GaN quantum dots. The structures have …

In this paper we systematically analyze the electronic structures of polar and nonpolar
wurtzite-InN/GaN quantum dots and their modification due to the quantum-confined Stark …

This paper presents the design and optimization of a side-coupled photonic crystal
nanobeam (1D PhC) cavity incorporating micro-ring resonators and a bus waveguide for …

We report the direct generation of linearly polarized single photons with a deterministic
polarization axis in self-assembled quantum dots (QDs), achieved by the use of non-polar …