Hyperdoping silicon, which introduces deep-level dopants into Si at concentrations near one
atomic percent, drastically changes its optoelectronic properties. We review recent progress …

Over four decades ago, pulsed-laser melting, or pulsed-laser annealing as it was termed at
that time, was the subject of intense study as a potential advance in silicon device …

Metal-semiconductor nanostructures are key objects for multifunctional electronics and
optical design. We report a new interatomic potential for atomistic simulation of a ternary Si …

Hyperdoping that introduces impurities with concentrations exceeding their equilibrium
solubility has been attracting great interest since the tuning of semiconductor properties …

Crystalline Si films incorporated with Al are important for applications in microelectronics
and solar cells. In this paper, we report on the morphology of crystalline Si surfaces in …

We present a study of the sub-bandgap photoresponse and leakage current in gold-
hyperdoped silicon photodiodes prepared using pulsed laser melting (PLM) of sub …

Short-wavelength-infrared (SWIR; 1.4–3.0 µ m) photodetection is important for various
applications. Inducing a low-cost silicon-compatible material, such as germanium, to detect …

Hyperdoped silicon is a promising material for near-infrared light detection, but to date, the
device efficiency has been limited. To optimize photodetectors based on this material that …

Hyperdoped Si formed by implantation followed by pulsed laser melting is a promising
material for enhanced near-infrared photodetection. To realize the full potential of this …

Incorporating ultrahigh concentrations of deep-level dopants in silicon drastically alters
silicon's optoelectronic properties. Photodiodes built from silicon hyperdoped with gold …