GaN-based micro-size light-emitting diode (μLED) have emerged as a promising light
sources for a wide range of applications in displays, visible light communication etc. In …

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and
the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission …

We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel
junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to …

AlGaN is the material of choice for high-efficiency deep UV light sources, which is the only
alternative technology to replace mercury lamps for water purification and disinfection. At …

The current LED lighting technology relies on the use of a driver to convert alternating
current (AC) to low-voltage direct current (DC) power, a resistive p-GaN contact layer to …

We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs)
emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light …

GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping
levels are achieved with a net acceptor concentration close to∼ 10 20 cm− 3, thanks to the …

Micro-light-emitting diodes (µLEDs) with tunnel junction (TJ) contacts were grown entirely by
metalorganic chemical vapor deposition. A LED structure was grown, treated with UV ozone …

In this report, the impact of different mesa designs on the optical and electrical
characteristics for GaN-based micro-light emitting diodes (µLEDs) has been systematically …

InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam
epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown …