Negative differential resistance (NDR) has been observed in IV characteristics measured
between two aluminum (Al) pads deposited on a layer containing Silicon nanostructures …

Silicon nanostructures have been prepared on Si wafer using electrochemical etching
process. The transformation of aluminum/nanostructured Si junction from Schottky to Ohmic …

Photo-enhanced hysteretic I–V curves have been observed under reverse bias in a pin
structure containing electrochemically etched nanostructured silicon (Si) sandwiched …

A pin heterostructure containing electrochemically synthesized silicon (Si) nanorods
embedded in a nonstoichiometric silicon oxide matrix sandwiched as i-layer between p-Si …

An all Si, pin device, consisting of a nanostructured porous Si layer sandwiched between a p-
type crystalline Si and an n-type amorphous Si, exhibits current controlled switching …

At present, the study of complex electro-physical characteristics of semiconductor
nanofilaments and nanofilms is of interest: the presence of non-monotonic oscillating …

IV measurement of electrochemically etched porous Si layer with planner electrode
geometry shows negative differential resistance at high bias. This has been explained on …