The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …

Gallium nitride (GaN) based high elect mobility transistors (HEMTs) possess a multitude of
excellent characteristics, enabling them to overcome the performance limitations of …

A systematic study of GaN-based heterostructure field-effect transistors with an insulating
carbon-doped GaN back barrier for high-voltage operation is presented. The impact of …

We make a 2-D analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with
a high-k passivation layer, and the results are compared with those having a normal SiN …

In this paper, the RF and DC characteristics of AlGaN/GaN High electron mobility transistor
is analysed using discrete field plate technique. Surprisingly, it reduces the device parasitic …

High power electronics using wide bandgap materials are maturing rapidly, and significant
market growth is expected in a near future. Ultra wide bandgap materials, which have an …

A 2-D simulation of off-state breakdown voltage (VBD) for AlGaN/GaN high electron mobility
transistors (HEMTs) with multi field-plates (FPs) is presented in this paper. The effect of …

This paper reports on an extensive analysis of the trapping processes and of the reliability of
experimental AlGaN/GaN MIS-HEMTs, grown on silicon substrate. The study is based on …

2-D analysis of breakdown characteristics in AlGaN/GaN high electron mobility transistors
(HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer …

In this paper, the drain current collapse in AlGaN/GaN High Electron Mobility Transistor
(HEMT) with field plate engineering is investigated. A small signal equivalent circuit of …