The dependence of surface morphology, crystalline quality, and optical properties on the
growth temperature of in-situ deposited SiN x interlayers in the semipolar (11 2¯ 2) AlGaN …

We report the self-assembled growth of inclined and highly ordered GaN nanorods on (10−
10) m-plane sapphire by metal–organic chemical vapor deposition, without metal catalyst …

We report on the structural and optical properties of polar gallium nitride on c-plane sapphire
substrates and semi-polar (11–22) GaN films on m-plane sapphire substrates by …

The high-quality semipolar (⁠ 11 2 2⁠) AlGaN films with high Al contents were successfully
deposited on (⁠ 10 1 0⁠) m-plane sapphire substrates with the insertion of AlN/AlGaN …

This paper describes effects of using post-annealing treatment in different conditions on the
properties of polycrystalline GaN layer grown on m-plane sapphire substrate by electron …

M-plane GaN thin films were grown on 11° misoriented γ-LiAlO 2 substrates without peeling
off or cracking by plasma-assisted molecular beam epitaxy. Because of anisotropic growth …

A 2 in.-diameter free-standing m-plane GaN wafer was fabricated through in situ self-
separation using HCl chemical reaction etching (HCRE) in hydride vapor-phase epitaxy …

We presented the epitaxial growth of n-GaN films on n-SiC substrates with n-Al 0.3 Ga 0.7 N
buffer and SiN x interlayer by metal organic vapor phase epitaxy. In order to optimize the …

GaN epitaxial films with SiN x interlayers were prepared by metal organic chemical vapor
deposition (MOCVD) on c-plane sapphire substrates. The influences of deposition times and …

Gallium nitride is a direct bandgap semiconductor commonly used in LED's and lasers. Its
wide bandgap, high thermal conductivity and ability to operate at high frequencies and …