Further improvement of optoelectronic performance is a target for all-inorganic lead halide
perovskite material CsPbBr3; however, it is greatly limited by the quality of the material …

CdZnTe (CZT) ingots doped with different concentrations of indium (2 ppm, 5 ppm, 8 ppm,
and 11 ppm) were grown by the Vertical Bridgman Method. The charge transport behaviors …

Abstract Large-size Cd 0.9 Zn 0.1 Te crystals were grown using high-pressure vertical zone
melting. It has been found that Te inclusions ranging 70–150 μm with density 3.5· 10 2 cm …

The resistivity of CdZnTe crystals significantly increases after irradiation with λ= 1064 nm Nd:
YAG laser. This effect is explained by the compensation of Cd vacancies with In interstitial …

Abstract The In-doped Cd 0.9 Zn 0.1 Te (CZT) crystals were grown by the modified Vertical
Bridgeman method and treated by in-situ annealing with six different cooling rates. Photo …

The temporal response of CdZnTe (CZT) detector to-ray is experimentally studied in this
article. Infrared (IR) illumination is utilized to improve the performance of CZT detector. The …

In this chapter, an overview of II-VI semiconductors, especially some important ternary II-VI
alloys, CdZnTe, CdHgTe, and HgZnTe, is given with more focusing on the applications in …

The deep-level defects of CdZnTe (CZT) crystals grown by the modified vertical Bridgman
(MVB) method act as trapping centers or recombination centers in the band gap, which have …

The deep-level defects in the Cd1-xZnxTe (CZT) and Cd1-xMnxTe (CMT) detectors are
characterized by photo-induced current transient spectroscopy (PICTS), thermoelectric …

Purpose–The main purposes of this work are: fabrication of bulk Cd x Zn 1-x Te materials of
different compositions, in particular, of melt grown CZT single crystals and compacted …