Germanium-based quantum well devices
R Pillarisetty, BY Jin, B Chu-Kung, MV Metz… - US Patent …, 2012 - Google Patents
A quantum well transistor has a germanium quantum well channel region. A silicon-
containing etch stop layer provides easy placement of a gate dielectric close to the channel …
containing etch stop layer provides easy placement of a gate dielectric close to the channel …
Germanium-based quantum well devices
R Pillarisetty, BY Jin, B Chu-Kung, MV Metz… - US Patent …, 2013 - Google Patents
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or
switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier …
switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier …
Germanium-based quantum well devices
R Pillarisetty, BY Jin, B Chu-Kung, MV Metz… - US Patent …, 2016 - Google Patents
(57) ABSTRACT A quantum well transistor has a germanium quantum well channel region.
A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the …
A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the …
Short wavelength infrared optoelectronic devices having a dilute nitride layer
R Roucka, S Siala, A Maros, T Liu, F Suarez… - US Patent …, 2022 - Google Patents
Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In
particular, the semicon ductor devices have a dilute nitride active layer with a bandgap …
particular, the semicon ductor devices have a dilute nitride active layer with a bandgap …
Monolithic multijunction power converter
FS Arias - US Patent 11,233,166, 2022 - Google Patents
2002/0000546 Al 2002/0117675 Al 2002/0195137 Al 2003/0047752 A1 2003/0070707 Al
2003/0145884 Al 2004/0045598 A1 2004/0079408 Al 2004/0130002 Al 2004/0187912 Al …
2003/0145884 Al 2004/0045598 A1 2004/0079408 Al 2004/0130002 Al 2004/0187912 Al …
Semiconductor laser device
A Sugahara - US Patent App. 12/564,552, 2010 - Google Patents
0002 1. Field of the Invention 0003. The present invention relates to a semiconductor laser
device, and particularly relates to a semiconductor laser device used for an optical pickup …
device, and particularly relates to a semiconductor laser device used for an optical pickup …
Germanium-based quantum well devices
R Pillarisetty, BY Jin, B Chu-Kung, MV Metz… - US Patent …, 2018 - Google Patents
(57) ABSTRACT A quantum well transistor has a germanium quantum well channel region.
A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the …
A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the …
Methods of fabricating planar infrared photodetectors
M Razeghi - US Patent 11,641,003, 2023 - Google Patents
H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic
radiation of shorter wavelength or corpuscular radiation and specially adapted either for the …
radiation of shorter wavelength or corpuscular radiation and specially adapted either for the …
Germanium-based quantum well devices
R Pillarisetty, BY Jin, B Chu-Kung, MV Metz… - US Patent …, 2015 - Google Patents
(57) ABSTRACT A quantum well transistor has a germanium quantum well channel region.
A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the …
A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the …
Methods of fabricating planar infrared photodetectors
M Razeghi - US Patent 12,080,823, 2024 - Google Patents
H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic
radiation of shorter wavelength or corpuscular radiation and specially adapted either for the …
radiation of shorter wavelength or corpuscular radiation and specially adapted either for the …