This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

The variation of switching parameters is one of the major challenges to both the scaling and
volume production of metal-oxide-based resistive random-access memories (RRAMs). In …

We propose a model describing the operations of hafnium oxide-based resistive random
access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport …

A simulation study has been performed to analyze resistive switching (RS) phenomena in
valence change memories (VCM) based on a HfO 2 dielectric. The kernel of the simulation …

Emerging nonvolatile memories based on resistive switching mechanisms pull intense
research and development efforts from both academia and industry. Oxide-based resistive …

Abstract Kinetic Monte Carlo resistive random access memory simulations are used to
understand different retention experiments performed at several temperatures. The physics …

The proposed constant voltage forming (CVF) is shown to increase the resistances of the
low resistance and high resistance states while reducing their variability. By forcing the …

In this paper, we thoroughly investigate the characteristics of the TiN/Ti/HfO 2/TiN resistive
random access memory (RRAM) device. The physical mechanisms involved in the device …

We present a unique compact model for oxide memristors based upon the concentration of
oxygen vacancies as state variables. In this model, the increase (decrease) in oxygen …

In this paper we investigate the physical mechanisms governing operations in HfO x RRAM
devices. Forming set and reset processes are studied using a model including power …