When the integrated circuit (IC) feature size is reduced to 0.13 μm and below, copper (Cu)
becomes the new wiring material in interconnect materials. The double damascene process …

In chemical mechanical polishing (CMP) process, surface defects and contamination will be
introduced on the wafer surface due to interfacial chemical reactions and abrasive particles …

The planarization property of slurry is a crucial factor in evaluating the quality of the copper
(Cu) film chemical mechanical polishing (CMP) process. Various chemical additives of …

Post-chemical mechanical polishing (CMP) cleaning is an indispensable process to remove
organic residues and particles on the wafer surface after CMP. Benzotriazole (BTA), a …

Chemical mechanical polishing (CMP) has become widely accepted for the planarization of
device interconnect structures in deep submicron semiconductor manufacturing. However …

The effect of Cu surface conditions on Cu-BTA complex formation was investigated using
contact angle, electrochemical impedance spectroscopy, spectroscopic ellipsometry and …

Benzotriazole (BTA) is a common corrosion inhibitor for chemical mechanical polishing
(CMP) of multilayer copper wiring of integrated circuit. It is also the main object to be …

Corrosion inhibitors play a key role in obtaining global planarization and protecting against
corrosion during copper CMP. However, these inhibitors leave organic residues and …

The cleaning solution for the post-chemical mechanical planarization (post-CMP) process of
tungsten in neutral-alkaline media requires corrosion inhibitors as an additive, especially for …

The use of benzotriazole (BTA) during Co film planarization leads to the undesirable
formation of insoluble Co-BTA complexes, which can be observed as organic residues on …