Processing at the atomic scale is becoming increasingly critical for state-of-the-art electronic
devices for computing and data storage, but also for emerging technologies such as related …

In this paper, we present the progress in the growth of nanoscale semiconductors grown via
atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD …

Gallium nitride (GaN) is the main component of modern-day high electron mobility
transistors due to its favorable electronic properties. As electronic devices become smaller …

AlGaN films with high Al content (Al/Ga∼ 5.5) were successfully grown via thermal atomic
layer deposition at low temperature (342° C) using trimethylaluminum and triethylgallium as …

In this study, aluminum gallium nitride (AlGaN) films are prepared by supercycle plasma
enhanced vapor deposition (PEALD) with trimethylgallium, trimethylaluminum, and NH 3 …

We report the successful preparation of polycrystalline gallium nitride (poly-GaN) layers by
thermal atomic layer deposition (ALD) at low temperatures (375–425° C) from …

Low temperature deposition of high-quality epitaxial GaN is crucial for its integration in
electronic applications. Chemical vapor deposition at approximately 800° C using SiC with …

In recent years, the application of (In, Al, Ga) N materials in photovoltaic devices has
attracted much attention. Like InGaN, it is a direct band gap material with high absorption at …

Gallium nitride (GaN) thin films were grown on Si (100), Si (111), and c-plane sapphire
substrates at 200 C via hollow-cathode plasma-assisted atomic layer deposition (HCPA …

GaN is an enabling material for light emitting diodes, advanced radio frequency, and power
semiconductor devices. However, fabrication of GaN devices often relies on harsh etch …