AC power cycling tests allow the most realistic reliability assessment by applying close to
real stress to the device or module under test to meet functional safety standards, which is …

Power cycling test (PCT) is an effective method to evaluate the SiC mosfet s' long-term
reliability, including lifetime and degradation mechanisms. Some of the aging precursors of …

Real-time degradation monitoring (DM) of the gate oxide is an effective method to improve
the reliability of SiC mosfet applications. Currently, the existing DM methods generally …

Gate-oxide degradation is a concern in silicon carbide (SiC) MOSFETs especially in safety-
critical applications such as aerospace and electric vehicles (EVs). To address this concern …

To diagnose different types of open-circuit (OC) faults in novel dual-winding fault-tolerant
permanent magnet motor (DFPMM) drive, a fault diagnosis strategy based on fuzzy logic is …

The past decade has witnessed increasing migration from silicon (Si) to silicon carbide (SiC)
in power electronics applications. This is due to the unique advantages of SiC over Si …

Gate open-circuit failure caused by cracking and liftoff of gate bond wires has been
demonstrated to be a new failure mode of SiC MOSFETs, which can cause serious …

Accurate control of junction temperature swing is crucial in DC power cycling tests for
reliability assessments. In this work, a model based aging independent closed-loop junction …

Half-bridge-level gate-oxide failure online detection is a basis of low failure rates for power
converters with silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors …

Abstract Silicon Carbide (SiC) power devices have witnessed increasing mainstream
adoption in transportation over the past decade. This is mainly because of the SiC's high …