Materials quest for advanced interconnect metallization in integrated circuits

JH Moon, E Jeong, S Kim, T Kim, E Oh, K Lee… - Advanced …, 2023 - Wiley Online Library
Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …

Passivation effect of the chlorinated paraffin added in the cutting fluid on the surface corrosion resistance of the stainless steel

L Yan, X Yao, T Zhang, F Jiang, Y Shui, H Xie, Z Xiang… - Molecules, 2023 - mdpi.com
Cutting fluids are the most effective method to lower the cutting temperature and decrease
the cutting tool wear. At the same time, the cutting fluids influence the corrosion resistance …

Effect of ethylenediamine on CMP performance of ruthenium in H 2 O 2-based slurries

Y Xu, T Ma, Y Liu, B Tan, S Zhang, Y Wang, G Song - RSC advances, 2022 - pubs.rsc.org
With the aggressive scaling of integrated circuits, ruthenium has been proposed as the next
generation barrier material to replace the conventional bilayer of tantalum and tantalum …

Effect of potassium persulfate on chemical mechanical planarization of Cu/Ni microstructures for MEMS

M Sun, L Jiang, Y Wu, Y Chen, Q Li, L Qian - Microelectronic Engineering, 2023 - Elsevier
Electrochemical FABrication (EFAB) can fabricate complex metal microstructures.
Planarization is crucial in EFAB in terms of flatness and surface quality. Accordingly …

Urea as a complexing agent for selective removal of Ta and Cu in sodium carbonate based alumina chemical–mechanical planarization slurry

A Shukla, NV Selvam… - Journal of the Serbian …, 2022 - shd-pub.org.rs
This work reports urea as a promising complexing agent in sodium carbonate-based
alumina slurry for chemical–mechanical planarization (CMP) of tantalum and copper. Ta and …

Organic additives based alkaline alumina slurry for selective removal of barrier layer metals

A Shukla, NV Selvam… - Indian Journal of Chemical …, 2022 - or.niscpr.res.in
In the present work, tantalum (Ta) and copper (Cu) chemical mechanical polishing (CMP)
has been carried out using a polishing slurry containing 2 wt% alumina (abrasive), 1 wt …

Maximizing the Chemical Removal of Ceria Abrasives in CMP for Silicon Oxide and Metal Polishing

CM Netzband - 2020 - soar.suny.edu
Cerium oxide or ceria has garnered a wide range of applications due to its redox active
nature. This redox activity is due to oxygen vacancies on the surface of the ceria creating a …

[PDF][PDF] This is an early electronic version of an as-received manuscript that has been

DD Sabo, NM Mimica-Dukić, MM Lesjak - researchgate.net
The purpose of this study was a comprehensive examination of phenolic profile, vitamin C
content, antioxidant, anti-acethylcholinesterase, cytotoxic and antimicrobial activities of …