Materials quest for advanced interconnect metallization in integrated circuits
Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …
improvements while increasing the cost and complexity of the technology with each …
Passivation effect of the chlorinated paraffin added in the cutting fluid on the surface corrosion resistance of the stainless steel
L Yan, X Yao, T Zhang, F Jiang, Y Shui, H Xie, Z Xiang… - Molecules, 2023 - mdpi.com
Cutting fluids are the most effective method to lower the cutting temperature and decrease
the cutting tool wear. At the same time, the cutting fluids influence the corrosion resistance …
the cutting tool wear. At the same time, the cutting fluids influence the corrosion resistance …
Effect of ethylenediamine on CMP performance of ruthenium in H 2 O 2-based slurries
Y Xu, T Ma, Y Liu, B Tan, S Zhang, Y Wang, G Song - RSC advances, 2022 - pubs.rsc.org
With the aggressive scaling of integrated circuits, ruthenium has been proposed as the next
generation barrier material to replace the conventional bilayer of tantalum and tantalum …
generation barrier material to replace the conventional bilayer of tantalum and tantalum …
Effect of potassium persulfate on chemical mechanical planarization of Cu/Ni microstructures for MEMS
M Sun, L Jiang, Y Wu, Y Chen, Q Li, L Qian - Microelectronic Engineering, 2023 - Elsevier
Electrochemical FABrication (EFAB) can fabricate complex metal microstructures.
Planarization is crucial in EFAB in terms of flatness and surface quality. Accordingly …
Planarization is crucial in EFAB in terms of flatness and surface quality. Accordingly …
Urea as a complexing agent for selective removal of Ta and Cu in sodium carbonate based alumina chemical–mechanical planarization slurry
A Shukla, NV Selvam… - Journal of the Serbian …, 2022 - shd-pub.org.rs
This work reports urea as a promising complexing agent in sodium carbonate-based
alumina slurry for chemical–mechanical planarization (CMP) of tantalum and copper. Ta and …
alumina slurry for chemical–mechanical planarization (CMP) of tantalum and copper. Ta and …
Organic additives based alkaline alumina slurry for selective removal of barrier layer metals
A Shukla, NV Selvam… - Indian Journal of Chemical …, 2022 - or.niscpr.res.in
In the present work, tantalum (Ta) and copper (Cu) chemical mechanical polishing (CMP)
has been carried out using a polishing slurry containing 2 wt% alumina (abrasive), 1 wt …
has been carried out using a polishing slurry containing 2 wt% alumina (abrasive), 1 wt …
Maximizing the Chemical Removal of Ceria Abrasives in CMP for Silicon Oxide and Metal Polishing
CM Netzband - 2020 - soar.suny.edu
Cerium oxide or ceria has garnered a wide range of applications due to its redox active
nature. This redox activity is due to oxygen vacancies on the surface of the ceria creating a …
nature. This redox activity is due to oxygen vacancies on the surface of the ceria creating a …
[PDF][PDF] This is an early electronic version of an as-received manuscript that has been
DD Sabo, NM Mimica-Dukić, MM Lesjak - researchgate.net
The purpose of this study was a comprehensive examination of phenolic profile, vitamin C
content, antioxidant, anti-acethylcholinesterase, cytotoxic and antimicrobial activities of …
content, antioxidant, anti-acethylcholinesterase, cytotoxic and antimicrobial activities of …