Silicon carbide (SiC), a material long known with potential for high-temperature, high-power,
high-frequency, and radiation hardened applications, has emerged as the most mature of …

The deposition of silicon carbide thin films and the associated technologies of impurity
incorporation, etching, surface chemistry, and electrical contacts for fabrication of solid-state …

Semiconductor Materials presents physico-chemical, electronic, electrical, elastic,
mechanical, magnetic, optical, and other properties of a vast group of elemental, binary, and …

Diamond, silicon carbide, gallium nitride, aluminum nitride, and boron nitride are currently
under development for both electronic and optoelectronic semiconductor devices …

We have found that, with proper pregrowth surface treatment, 6H‐SiC single‐crystal films
can be grown by chemical vapor deposition (CVD) at 1450° C on vicinal (0001) 6H‐SiC with …

(57) ABSTRACT A high sensitivity radiation detecting photodiode formed in silicon carbide
comprises a monocrystalline silicon carbide substrate; a first monocrystalline portion of …

The extreme properties of diamond, SiC and GaN provide combinations of attributes for high-
power,-temperature,-frequency and optoelectronic applications. The methods of deposition …

High temperature electronics is an advancing field aimed at the development of
semiconductor devices designed to function reliably at temperatures in excess of 125° C …

We report on the growth and modulation of silicon carbide nanowires (SiC NWs). The NWs
were fabricated by chemical vapor deposition (CVD) process, and had diameters of< 50nm …

Monophasic β-SiC powder has been synthesized in a commercial microwave oven
operating at 2450 MHz and power levels up to 980 W. This simple method of solid-state …