Structural and electrical response of emerging memories exposed to heavy ion radiation
Hafnium oxide-and GeSbTe-based functional layers are promising candidates in material
systems for emerging memory technologies. They are also discussed as contenders for …
systems for emerging memory technologies. They are also discussed as contenders for …
Influence of high energy ion irradiation on structural, morphological and optical properties of high-k dielectric hafnium oxide (HfO2) thin films grown by atomic layer …
Modifications and resulting changes in various properties of nanocrystalline HfO 2 high-k
dielectric thin films with nominal thickness of 20 nm grown by atomic layer deposition …
dielectric thin films with nominal thickness of 20 nm grown by atomic layer deposition …
Interface engineering at Bi/As2Se3 bilayer thin film by 120 MeV Ag swift heavy ion irradiation at different fluence: Modifications in its structural, optical and …
Abstract Modifications induced by 120 MeV Ag ion irradiation on the structural, optical and
morphological properties of Bi/As 2 Se 3 bilayer thin films with varying B i layer thickness on …
morphological properties of Bi/As 2 Se 3 bilayer thin films with varying B i layer thickness on …
Radiation Response of HfOx-Based Resistive Random Access Memory (RRAM) Devices
A report on the fabrication and radiation response of HfO x thin film-based resistive random
access memory (RRAM) devices is presented in this study. Au/HfO x/Au cross-bar (10 μm× …
access memory (RRAM) devices is presented in this study. Au/HfO x/Au cross-bar (10 μm× …
Electronic excitation-induced tunneling and charge-trapping explored by in situ electrical characterization in Ni/HfO2/β-Ga2O3 metal–oxide–semiconductor capacitors
In situ current–voltage and capacitance–voltage characteristics were performed on Ni/HfO
2/β-Ga 2 O 3 devices using 120 MeV Ag 7+ swift heavy ion (SHI) irradiation. The Poole …
2/β-Ga 2 O 3 devices using 120 MeV Ag 7+ swift heavy ion (SHI) irradiation. The Poole …
Defect-induced phase transition in hafnium oxide thin films: comparing heavy ion irradiation and oxygen-engineering effects
Hafnium oxide acts as a functional dielectric in a variety of traditional and emerging
nonvolatile memory technologies. To investigate the effect of heavy ion irradiation on its …
nonvolatile memory technologies. To investigate the effect of heavy ion irradiation on its …
[HTML][HTML] Heavy ion irradiation induced phase transitions and their impact on the switching behavior of ferroelectric hafnia
The discovery of ferroelectric hafnium oxide enabled a variety of non-volatile memory
devices, like ferroelectric tunnel junctions or field-effect transistors. Reliable application of …
devices, like ferroelectric tunnel junctions or field-effect transistors. Reliable application of …
Effects of Bottom Electrode Materials on the Resistive Switching Characteristics of HfO2-Based RRAM Devices
In this paper, we present the results of our systematic investigations of the resistive switching
characteristics of HfO2-based metal–insulator–metal structures using four different metal …
characteristics of HfO2-based metal–insulator–metal structures using four different metal …
Radiation tolerance, charge trapping, and defect dynamics studies of ALD-grown Al/HfO2/Si nMOSCAPs
The radiation response, long-term performance, and reliability of HfO 2-based gate dielectric
materials play a critical role in metal oxide semiconductor (MOS) technology for space …
materials play a critical role in metal oxide semiconductor (MOS) technology for space …
Swift heavy ion assisted growth of silver nanoparticles embedded in hafnium oxide matrix
D Munthala, A Mangababu… - Journal of Applied …, 2021 - pubs.aip.org
In the present work, we report on the swift heavy ion induced formation of silver (Ag)
nanoparticles (NPs) embedded in the hafnium oxide (HfO 2) matrix. HfO 2 and Ag multilayer …
nanoparticles (NPs) embedded in the hafnium oxide (HfO 2) matrix. HfO 2 and Ag multilayer …