Monolithic 3D integration as a pathway to energy-efficient computing and beyond: From materials and devices to architectures and chips
As emerging technologies like artificial intelligence (AI) and big data continue to evolve, the
demand for high-performance computing (HPC) has been increasing, driving the …
demand for high-performance computing (HPC) has been increasing, driving the …
Universal Model for Ferroelectric Capacitors Operating Down to Deep Cryogenic Temperatures
E Paasio, R Ranta, S Majumdar - arXiv preprint arXiv:2410.09131, 2024 - arxiv.org
Binary oxide ferroelectrics like doped HfO2, compatible with complementary metal-oxide-
semiconductor (CMOS) platforms, have gained significant interest for energy efficient …
semiconductor (CMOS) platforms, have gained significant interest for energy efficient …
Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor
MK Ram, H Dahlberg… - IEEE Electron Device …, 2024 - ieeexplore.ieee.org
Non-volatile cryogenic memories are crucial for realizing energy-efficient and scaled
quantum computing systems. In this letter, we evaluate the cryogenic performance of an …
quantum computing systems. In this letter, we evaluate the cryogenic performance of an …
Enhanced Endurance and Stability of FDSOI Ferroelectric FETs at Cryogenic Temperatures for Advanced Memory Applications
M Zhang, H Qian, J Xu, M Ma, R Shen… - … on Electron Devices, 2024 - ieeexplore.ieee.org
In this work, we have systematically characterized the ferroelectric (FE) and memory
properties in the fully depleted silicon-on-insulator (FDSOI) FE field-effect transistor (FeFET) …
properties in the fully depleted silicon-on-insulator (FDSOI) FE field-effect transistor (FeFET) …
Enhanced FeFET Performance for Energy Efficient Neuromorphic Computing at Cryogenic Conditions
Y Liu, X Zhan, P Guo, Y Feng, B Chen… - … Conference on IC …, 2024 - ieeexplore.ieee.org
To break the Neumann bottlenecks with the increasing data-centered tasks, Computing-in-
memory (CiM) strucutes with artificial synapses based on nonvolatile memory is a great …
memory (CiM) strucutes with artificial synapses based on nonvolatile memory is a great …
Exploring Charge Trapping Dynamics in Si: HfO₂-FeFETs by Temperature-Dependent Electrical Characterization
Ferroelectric HfO 2 technology shows promise for non-volatile memory and neuromorphic
devices. However, charge trapping limits their performance. This work presents temperature …
devices. However, charge trapping limits their performance. This work presents temperature …