Surface electron‐diffraction patterns of β‐FeSi2 films epitaxially grown on silicon
JE Mahan, VL Thanh, J Chevrier, I Berbezier… - Journal of applied …, 1993 - pubs.aip.org
Semiconducting &FeSi, is drawing much current research interest because of hoped-for
silicon-based optoelectronics applications. The study of heteroepitaxial fdm growth on …
silicon-based optoelectronics applications. The study of heteroepitaxial fdm growth on …
Electron-spin-resonance STM on iron atoms in silicon
Y Manassen, I Mukhopadhyay, NR Rao - Physical Review B, 2000 - APS
Electron-spin-resonance–scanning tunneling microscopy (ESR)-(STM) of iron atoms in
silicon was observed: Si (111) surfaces were covered with iron atoms and annealed. This …
silicon was observed: Si (111) surfaces were covered with iron atoms and annealed. This …
Silicide epilayers: recent developments and prospects for a Si-compatible technology
J Derrien, J Chevrier, V Le Thanh, TE Crumbaker… - Applied surface …, 1993 - Elsevier
Semiconducting silicides epitaxially grown on silicon may be promising materials for
integrated optoelectronic devices. The structure and the physical properties of FeSi 2 are …
integrated optoelectronic devices. The structure and the physical properties of FeSi 2 are …
Thermal reaction of iron with a Si (111) vicinal surface: Surface ordering and growth of CsCl-type iron silicide
The structural evolution of a vicinal silicon surface, developing upon low coverage
deposition of Fe [0.33 and 2 monolayers (ML)], has been carefully studied as a function of …
deposition of Fe [0.33 and 2 monolayers (ML)], has been carefully studied as a function of …
Scanning tunneling microscopy and spectroscopy of iron suicide epitaxially grown on Si (111)
W Raunau, H Niehus, T Schilling, G Comsa - Surface science, 1993 - Elsevier
Epitaxial iron suicide films have been grown on Si (111) by solid phase epitaxy (SPE) in
UHV. Structural and electronic properties have been investigated with scanning tunneling …
UHV. Structural and electronic properties have been investigated with scanning tunneling …
Epitaxial iron silicides on Si (001): an investigation with scanning tunneling microscopy and spectroscopy
W Raunau, H Niehus, G Comsa - Surface science, 1993 - Elsevier
Iron silicide films have been grown epitaxially on Si (001) by solid phase epitaxy (SPE) in
UHV. The grown silicide films have been investigated in geometric and electronic structure …
UHV. The grown silicide films have been investigated in geometric and electronic structure …
Epitaxial phase transitions in the iron/silicon system
H Von Känel, N Onda, H Sirringhaus… - Applied Surface …, 1993 - Elsevier
The properties of a newly discovered pseudomorphic FeSi/Si (111) phase with the CsCl
structure are discussed. Upon annealing the new phase undergoes phase transitions to the …
structure are discussed. Upon annealing the new phase undergoes phase transitions to the …
Atomic structure of the reactive Fe/Si (111) 7× 7 interface
The early stages of Fe/Si (111) interface formation have been investigated using x-ray
photoelectron diffraction. Deposition of Fe in the range of one monolayer on Si (111) 7× 7 at …
photoelectron diffraction. Deposition of Fe in the range of one monolayer on Si (111) 7× 7 at …
Homogeneous surface iron silicide formation on Si(111): The phase
M Krause, F Blobner, L Hammer, K Heinz, U Starke - Physical Review B, 2003 - APS
The early stages of iron silicide formation on Si (111) were studied by scanning tunneling
microscopy (STM), low-energy electron diffraction, and Auger electron spectroscopy. While …
microscopy (STM), low-energy electron diffraction, and Auger electron spectroscopy. While …
Iron silicides grown on Si (100): metastable and stable phases
The growth of iron silicides on Si (100) by solid phase epitaxy has been investigated by
photoelectron spectroscopies. The different iron silicide phases appearing and their stability …
photoelectron spectroscopies. The different iron silicide phases appearing and their stability …