This paper reviews semi‐polar GaN surfaces, of interest for light emitting devices, from both
theoretical and experimental perspectives. Theoretical results on polarization charges at …

US9077151B2 - Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts
less than +/-15 degrees in the C-direction - Google Patents US9077151B2 - Semi-polar III-nitride …

We present a systematic study of strain effects on the electronic band structure of the group-
III-nitrides (AlN, GaN and InN) in the wurtzite phase. The calculations are based on density …

Partial or full linear polarization is characteristic for the spontaneous emission of light from
semipolar and nonpolar InGaN quantum wells. This property is an implication of the …

Group III-nitride semiconductors (GaN, AlN, and InN) are attractive materials for a wide
range of electronic and photonic applications. The most widely employed growth plane for III …

ABSTRACT III-nitrides based light-emitting diodes and laser diodes (LDs) have shown great
success as solid-state lighting sources, but the development of common c-plane (0001) …

Abstract Single-phase flat semipolar (10–13) AlN epilayers on m-plane (10–10) sapphire
substrates grown by ammonia-free high-temperature metalorganic vapor phase epitaxy are …

Wet chemical etching using hot KOH and H3PO4 solutions was performed on semipolar
(112) and nonpolar (110) GaN films grown on sapphire substrates. An alternating …

Indium incorporation was studied on a wide variety of planes tilted from the c-plane towards
either the a-plane or the m-plane, as well as on two additional planes that were tilted with …

First-principles calculations of the electronic and optical properties of the bulk In x Ga 1− x N
alloys are simulated within the framework of full-potential linearized augmented plane-wave …