Synthesis and applications of III–V nanowires

E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Direct-bandgap emission from hexagonal Ge and SiGe alloys

EMT Fadaly, A Dijkstra, JR Suckert, D Ziss… - Nature, 2020 - nature.com
Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the
electronics industry for more than half a century. However, cubic silicon (Si), germanium …

Cathodoluminescence nanoscopy: state of the art and beyond

Z Dang, Y Chen, Z Fang - ACS nano, 2023 - ACS Publications
Cathodoluminescence (CL) nanoscopy is proven to be a powerful tool to explore nanoscale
optical properties, whereby free electron beams achieve a spatial resolution far beyond the …

Doping challenges and pathways to industrial scalability of III–V nanowire arrays

W Kim, L Güniat, A Fontcuberta i Morral… - Applied Physics …, 2021 - pubs.aip.org
Semiconductor nanowires (NWs) have been investigated for decades, but their application
into commercial products is still difficult to achieve, with triggering causes related to the …

Nanosecond Carrier Lifetime of Hexagonal Ge

VT van Lange, A Dijkstra, EMT Fadaly… - ACS …, 2024 - ACS Publications
Hexagonal Si1–x Ge x with suitable alloy composition promises to become a new silicon
compatible direct bandgap family of semiconductors. Theoretical calculations, however …

Employing cathodoluminescence for nanothermometry and thermal transport measurements in semiconductor nanowires

KW Mauser, M Solà-Garcia, M Liebtrau, B Damilano… - ACS …, 2021 - ACS Publications
Thermal properties have an outsized impact on efficiency and sensitivity of devices with
nanoscale structures, such as in integrated electronic circuits. A number of thermal …

A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM

P Ramaswamy, S Devkota, R Pokharel, S Nalamati… - Scientific Reports, 2021 - nature.com
We report the first study on doping assessment in Te-doped GaAsSb nanowires (NWs) with
variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron …

GaAs/GaInP nanowire solar cell on Si with state-of-the-art V oc and quasi-Fermi level splitting

C Tong, A Delamarre, R De Lépinau, A Scaccabarozzi… - Nanoscale, 2022 - pubs.rsc.org
With their unique structural, optical and electrical properties, III–V nanowires (NWs) are an
extremely attractive option for the direct growth of III–Vs on Si for tandem solar cell …

Electron‐Induced Chirality‐Selective Routing of Valley Photons via Metallic Nanostructure

L Zheng, Z Dang, D Ding, Z Liu, Y Dai, J Lu… - Advanced …, 2023 - Wiley Online Library
Valleytronics in 2D transition metal dichalcogenides has raised a great impact in
nanophotonic information processing and transport as it provides the pseudospin degree of …

Exciton-dielectric mode coupling in MoS2 nanoflakes visualized by cathodoluminescence

DT Vu, N Matthaiakakis, H Saito, T Sannomiya - Nanophotonics, 2022 - degruyter.com
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs), possessing
unique exciton luminescence properties, have attracted significant attention for use in optical …