A review of low‐temperature solution‐processed metal oxide thin‐film transistors for flexible electronics

JW Park, BH Kang, HJ Kim - Advanced Functional Materials, 2020 - Wiley Online Library
Solution processing, including printing technology, is a promising technique for oxide thin‐
film transistor (TFTs) fabrication because it tends to be a cost‐effective process with high …

Wearable, flexible, and multifunctional healthcare device with an ISFET chemical sensor for simultaneous sweat pH and skin temperature monitoring

S Nakata, T Arie, S Akita, K Takei - ACS sensors, 2017 - ACS Publications
Real-time daily healthcare monitoring may increase the chances of predicting and
diagnosing diseases in their early stages which, currently, occurs most frequently during …

Deep-ultraviolet-triggered neuromorphic functions in In-Zn-O phototransistors

J Wang, Y Chen, LA Kong, Y Fu, Y Gao… - Applied Physics Letters, 2018 - pubs.aip.org
In recent years, photoelectronic synaptic devices have emerged as a platform for use in next-
generation neuromorphic systems and artificial neural networks (ANNs). In this paper, we …

One-volt, solution-processed InZnO thin-film transistors

W Cai, H Li, Z Zang - IEEE Electron Device Letters, 2021 - ieeexplore.ieee.org
In this letter, we report solution-processed, high-performance Indium-Zinc-Oxide (IZO) thin-
film transistors (TFTs). The annealing temperature of IZO films are studied and found that …

High Performance Amorphous In0.5Ga0.5O Thin‐Film Transistor Embedded with Nanocrystalline In2O3 Dots for Flexible Display Application

MH Rabbi, A Ali, C Park, J Jang - Advanced Electronic Materials, 2023 - Wiley Online Library
High‐performance, coplanar amorphous In0. 5Ga0. 5O (a‐IGO) thin film transistor (TFT) on a
polyimide (PI) substrate deposited by spray pyrolysis (SP) is reported. The SP a‐IGO film …

High-performance all-solution-processed flexible photodetector arrays based on ultrashort channel amorphous oxide semiconductor transistors

G Han, S Cao, Q Yang, W Yang, T Guo… - ACS applied materials …, 2018 - ACS Publications
Amorphous oxide semiconductor (AOS) field-effect phototransistors (FEPTs) are promising
candidates for emerging photodetectors. Unfortunately, traditional lateral AOS FEPTs suffer …

Performance enhancement of solution-processed InZnO thin-film transistors by Al doping and surface passivation

W Cai, H Li, M Li, Z Zang - Journal of Semiconductors, 2022 - iopscience.iop.org
Solution-processed oxide semiconductors have been considered as a potential alternative
to vacuum-based ones in printable electronics. However, despite spin-coated InZnO (IZO) …

Solution-processed flexible metal-oxide thin-film transistors operating beyond 20 MHz

X Wei, S Kumagai, K Tsuzuku… - Flexible and Printed …, 2020 - iopscience.iop.org
Complementary metal-oxide-semiconductor, an elementary building block, allows for a high
degree of implementation of logic circuits with relatively low power consumption and low …

Reducing the persistent photoconductivity effect in zinc oxide by sequential surface ultraviolet ozone and annealing treatments

S Park, NK Cho, BJ Kim, SY Jeong, IK Han… - ACS Applied …, 2019 - ACS Publications
We developed a method to reduce the persistent photoconductivity (PPC) effect of zinc oxide
(ZnO) thin film transistors (TFTs) by sequential surface treatment, which includes …

Thorough elimination of persistent photoconduction in amorphous InZnO thin-film transistor via dual-gate pulses

H Liu, X Zhou, C Fan, J Chen, L Lu… - IEEE Electron …, 2022 - ieeexplore.ieee.org
Amorphous InZnO (a-IZO) thin film transistors (TFT) are highly sensitive to green or shorter
wavelength light, and can be applied as photosensors. Nonetheless, the application of a-IZO …