The tin sulfide (SnxSy) class of materials has attracted tremendous research interest in
recent years owing to their intriguing physicochemical properties. Their inimitable optical …

The rapid research progress in tin-based binary sulfides (SnxSy= o-SnS, c-SnS, SnS2, and
Sn2S3) by the solution process has opened a new path not only for photovoltaics to …

Theoretical calculations have confirmed that modulation of vacancy defects could enhance
the sensing properties of semiconductor gas sensors effectively. In this work, we develop a …

Two-dimensional group-IV monochalcogenides MX (M= Ge, and Sn; X= S, and Se) are
explored for their potential in gas-sensing applications. In this work, a combined theoretical …

Using ab-initio simulations, we have investigated the magnetic and thermoelectric response
of the pristine and Mn-, Ni-, and In-doped BaGeO 3 at Ge-site. The dopants Mn, Ni, and In …

Based on first-principles simulations, we have studied the effect of vacancy, anti-site and
Mo/W doping on the physical properties of Janus SnSSe. We find that the formation energies …

SnS is a two-dimensional black phosphorus-like material with potential in gas sensor
applications. The vacancy defects generally existed in SnS structure could show a marked …

Based on the first-principles calculations, we examine the effects of In/Sb/P doping on the
structure, electronics, and magnetic properties of monolayer SnS. We have examined that …

With the rapid development of electric vehicles and mobile technologies, there is a high
demand for electrochemical energy storage devices and electrochemical energy conversion …

Abstract 2D ferromagnetic semiconductors are key to next‐generation spintronic devices in
the post‐Moore era. The combination of ferromagnetic and optoelectronic properties offers …