thin-film transistors (TFTs) for highly sensitive biosensing applications: a review
This review manuscript presents Thin-Film Transistors (TFTs) for various highly sensitive
biosensing applications. A low-cost, highly sensitive, early-stage diagnostic bio-sensing …
biosensing applications. A low-cost, highly sensitive, early-stage diagnostic bio-sensing …
Palladium-based trench gate MOSFET for highly sensitive hydrogen gas sensor
A Kumar - Materials Science in Semiconductor Processing, 2020 - Elsevier
This paper presents, Palladium-based Trench Gate MOSFET (TG-MOSFET) for the detection
of hydrogen gas. The sensing mechanism occurs with the dissociation of hydrogen …
of hydrogen gas. The sensing mechanism occurs with the dissociation of hydrogen …
Performance evaluation of linearity and intermodulation distortion of nanoscale GaN-SOI FinFET for RFIC design
This work presents, performance evaluation of linearity and intermodulation distortion of
novel nanoscale Gallium Nitride (GaN) Silicon-on-Insulator (SOI) N-channel FinFET (n …
novel nanoscale Gallium Nitride (GaN) Silicon-on-Insulator (SOI) N-channel FinFET (n …
Reliability Issues of In2O5Sn Gate Electrode Recessed Channel MOSFET: Impact of Interface Trap Charges and Temperature
In this paper, reliability issues of In2O5Sn (indium-tin oxide: a transparent material)
transparent gate recessed channel (TGRC)-MOSFET has been analyzed by considering the …
transparent gate recessed channel (TGRC)-MOSFET has been analyzed by considering the …
Polarization induced doping and high-k passivation engineering on T-gate MOS-HEMT for improved RF/microwave performance
High electron-mobility transistors (HEMTs) based on III-nitrides are well-known as ideal
choices for high-power, radio-frequency applications. HEMTs, on the other hand, must deal …
choices for high-power, radio-frequency applications. HEMTs, on the other hand, must deal …
Comprehensive analysis of sub-20 nm black phosphorus based junctionless-recessed channel MOSFET for analog/RF applications
In this work, a comprehensive analog and RF performance of a novel Black Phosphorus-
Junctionless-Recessed Channel (BP-JL-RC) MOSFET has been explored at 45 nm …
Junctionless-Recessed Channel (BP-JL-RC) MOSFET has been explored at 45 nm …
20 nm GAA-GaN/Al2O3 nanowire MOSFET for improved analog/linearity performance metrics and suppressed distortion
This work investigates the suppressed distortion and improved analog/linearity performance
metrics of gate all around (GAA) Gallium Nitride (GaN)/Al2O3 Nanowire (NW) n-channel …
metrics of gate all around (GAA) Gallium Nitride (GaN)/Al2O3 Nanowire (NW) n-channel …
Comprehensive power gain assessment of GaN-SOI-FinFET for improved RF/wireless performance using TCAD
In this work, we present a radio frequency (RF) assessment of the nanoscale gallium nitride-
silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the …
silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the …
Impact of channel doping concentration on the performance characteristics and the reliability of ultra-thin double gate DG-FinFET compared with nano-single gate FD …
N Bourahla, B Hadri, A Bourahla - Silicon, 2022 - Springer
The efficiency of the integrated circuit (IC) as the reliability, speed, high production costs,
and power consumption will be reduced by the nanometric size of the MOSFET transistor …
and power consumption will be reduced by the nanometric size of the MOSFET transistor …
Linearity performance analysis due to lateral straggle variation in hetero-stacked TFET
K Vanlalawmpuia, B Bhowmick - Silicon, 2020 - Springer
In this paper, we examine the impact of variation in the lateral straggle parameter on linearity
and reliability performance for the Hetero-stacked TFET. By incorporating hetero-stack in the …
and reliability performance for the Hetero-stacked TFET. By incorporating hetero-stack in the …