Passively modelocked surface-emitting semiconductor lasers

U Keller, AC Tropper - Physics Reports, 2006 - Elsevier
This paper will review and discuss pico-and femtosecond pulse generation from passively
modelocked vertical–external-cavity surface-emitting semiconductor lasers (VECSELs). We …

Extended cavity surface-emitting semiconductor lasers

AC Tropper, S Hoogland - Progress in Quantum Electronics, 2006 - Elsevier
We review progress in the development of an unconventional type of semiconductor laser
that has become the focus of much attention in recent years. The vertical-external-cavity …

High‐brightness long‐wavelength semiconductor disk lasers

N Schulz, JM Hopkins, M Rattunde… - Laser & Photonics …, 2008 - Wiley Online Library
A review on the recent developments in the field of long‐wavelength (λ> 1.2 μm) high‐
brightness optically‐pumped semiconductor disk lasers (OPSDLs) is presented. As thermal …

Mid-infrared semiconductor lasers: a review

E Tournie, AN Baranov - Semiconductors and Semimetals, 2012 - Elsevier
The mid-infrared (MIR) wavelength range of the electromagnetic spectrum offers a number
of applications of growing importance such as photonic sensors for environment, industry or …

Single-frequency tunable Sb-based VCSELs emitting at 2.3 μm

A Ouvrard, A Garnache, L Cerutti… - IEEE Photonics …, 2005 - ieeexplore.ieee.org
We present a comparison between two kinds of single-frequency Sb-based semiconductor
VCSELs operating at 2.3 μm in continuous-wave regime at room temperature. These lasers …

Single-Frequency operation of External-Cavity VCSELs: Non-linear multimode temporal dynamics and quantumlimit

A Garnache, A Ouvrard, D Romanini - Optics Express, 2007 - opg.optica.org
We present an experimental and theoretical investigation of the non-linear multimode
dynamics of external–cavity VCSELs emitting at 1 and 2.3 mm. We account for the stable …

High-power,(AlGaIn)(AsSb) semiconductor disk laser at 2.0 μm

JM Hopkins, N Hempler, B Rösener, N Schulz… - Optics letters, 2008 - opg.optica.org
We report a high-power (AlGaIn)(AsSb) semiconductor disk laser emitting around 2 μm. With
a diamond heat spreader used for thermal management, a maximum output power of just …

Intracavity laser absorption spectroscopy with a vertical external cavity surface emitting laser at 2.3 μm: Application to water and carbon dioxide

A Garnache, A Liu, L Cerutti, A Campargue - Chemical Physics Letters, 2005 - Elsevier
A diode pumped Vertical Cavity Surface Emitting Laser emitting at 2.3 μm has been
developed to extend the near infrared spectral region accessible for Intracavity Laser …

290-fs pulses from a semiconductor disk laser

P Klopp, F Saas, M Zorn, M Weyers, U Griebner - Optics express, 2008 - opg.optica.org
Transform-limited pulses as short as 290 fs at 1036 nm are generated by a diode-pumped
semiconductor disk laser. The all-semiconductor laser employs a graded-gap-barrier design …

Progress of optically pumped GaSb based semiconductor disk laser

S Shu, G Hou, J Feng, L Wang, S Tian… - Opto-Electronic …, 2018 - researching.cn
This paper reviewed the development of optically pumped GaSb based semiconductor disk
lasers (SDLs) emission at 2 μm wavelength region from the aspects of wavelength …