Composition determination of semiconductor alloys towards atomic accuracy by HAADF-STEM
This paper presents a comprehensive investigation of an extended method to determine
composition of materials by scanning transmission electron microscopy (STEM) high angle …
composition of materials by scanning transmission electron microscopy (STEM) high angle …
Segregation at interfaces in (GaIn) As/Ga (AsSb)/(GaIn) As-quantum well heterostructures explored by atomic resolution STEM
Surface segregation and interaction effects of In and Sb in (GaIn) As/Ga (AsSb)/(GaIn) As-
“W”-type quantum well heterostructures (“W”-QWHs) are investigated by high angle annular …
“W”-type quantum well heterostructures (“W”-QWHs) are investigated by high angle annular …
Element specific atom counting for heterogeneous nanostructures: Combining multiple ADF STEM images for simultaneous thickness and composition determination
In this paper, a methodology is presented to count the number of atoms in heterogeneous
nanoparticles based on the combination of multiple annular dark field scanning transmission …
nanoparticles based on the combination of multiple annular dark field scanning transmission …
Angle-dependence of ADF-STEM intensities for chemical analysis of InGaN/GaN
In this paper we perform angular resolved annular-dark field (ADF) scanning-transmission
electron microscopy (STEM) to study the scattered intensity in an InGaN layer buried in GaN …
electron microscopy (STEM) to study the scattered intensity in an InGaN layer buried in GaN …
Quantitative composition determination by ADF-STEM at a low-angular regime: A combination of EFSTEM and 4DSTEM
S Firoozabadi, P Kükelhan, A Beyer, J Lehr, D Heimes… - Ultramicroscopy, 2022 - Elsevier
High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) is
a valuable method for composition determination of nanomaterials. However, light elements …
a valuable method for composition determination of nanomaterials. However, light elements …
Simultaneous determination of local thickness and composition for ternary III-V semiconductors by aberration-corrected STEM
Scanning transmission electron microscopy (STEM) is a suitable method for the quantitative
characterization of nanomaterials. For an absolute composition determination on an atomic …
characterization of nanomaterials. For an absolute composition determination on an atomic …
Atomic-scale 3D reconstruction of antiphase boundaries in GaP on (001) silicon by STEM
In order to overcome the limitations of silicon-based electronics, the integration of optically
active III–V compounds is a promising approach. Nonetheless, their integration is far from …
active III–V compounds is a promising approach. Nonetheless, their integration is far from …
Composition determination for quaternary III–V semiconductors by aberration-corrected STEM
Quantitative scanning transmission electron microscopy (STEM) is a powerful tool for the
characterization of nano-materials. Absolute composition determination for ternary III–V …
characterization of nano-materials. Absolute composition determination for ternary III–V …
Mapping of strain in multilayer GaAs/AlAs superlattices from HRTEM micrographs
X Li, Y Ouyang, R Zhang, X Tao, Y Geng, S Li, Y Zhang… - Materials Letters, 2021 - Elsevier
High resolution transmission electron microscope and geometric phase analysis are used to
study strain distribution across the cross-section of GaAs/AlAs multilayer superlattices. This …
study strain distribution across the cross-section of GaAs/AlAs multilayer superlattices. This …
[PDF][PDF] Preface to special issue on microscopy of semiconducting materials 2017 (MSM-XX)
Preface to special issue on Microscopy of Semiconducting Materials 2017 (MSM-XX) Page
1 This is a repository copy of Preface to special issue on Microscopy of Semiconducting …
1 This is a repository copy of Preface to special issue on Microscopy of Semiconducting …