Method of making a transistor
H Niebojewski, Y Morand, M Vinet - US Patent 8,980,702, 2015 - Google Patents
(57) ABSTRACT A method for manufacturing a transistor includes forming a Stack of
semiconductor on insulator type layers including at least one Substrate, Surmounted by a …
semiconductor on insulator type layers including at least one Substrate, Surmounted by a …
Method of making a transistor
H Niebojewski, Y Morand, M Vinet - US Patent 9,978,602, 2018 - Google Patents
The invention relates to a method for manufacturing a transistor comprising the preparation
of a stack of layers of the semiconductor on insulator type comprising at least one substrate …
of a stack of layers of the semiconductor on insulator type comprising at least one substrate …
Method of making a semiconductor layer having at least two different thicknesses
M Vinet, Y Morand, H Niebojewski - US Patent 8,962,399, 2015 - Google Patents
A method is provided for producing a semiconductor layer having at least two different
thicknesses from a stack of the semiconductor on insulator type including at least one Sub …
thicknesses from a stack of the semiconductor on insulator type including at least one Sub …
[HTML][HTML] The Heat Treatment Effect on the Oxidation Rate of the Ge-Doped Si (100)
BN Shakarab, A Baghizadeh, DAA Gol - 2013 - scirp.org
In this paper, the Si (100) substrate was implanted by Ge ions at different doses to study the
effect of the preliminary heat treatment on the wet oxidized layer of the Si using Rutherford …
effect of the preliminary heat treatment on the wet oxidized layer of the Si using Rutherford …