Bias temperature instability of mosfets: Physical processes, models, and prediction
CMOS technology dominates the semiconductor industry, and the reliability of MOSFETs is a
key issue. To optimize chip design, trade-offs between reliability, speed, power …
key issue. To optimize chip design, trade-offs between reliability, speed, power …
As-grown-generation (AG) model of NBTI: A shift from fitting test data to prediction
Negative bias temperature instabilities (NBTI) received little attention pre-2000, but have
been intensively investigated post-2000, as they become limiting device lifetime. The …
been intensively investigated post-2000, as they become limiting device lifetime. The …
In situ electron holography study of charge distribution in high-κ charge-trapping memory
Y Yao, C Li, ZL Huo, M Liu, CX Zhu, CZ Gu… - Nature …, 2013 - nature.com
Charge-trapping memory with high-κ insulator films is a candidate for future memory
devices. Many efforts with different indirect methods have been made to confirm the trapping …
devices. Many efforts with different indirect methods have been made to confirm the trapping …
Energy distribution of positive charges in gate dielectric: Probing technique and impacts of different defects
Positive charges (PCs) in gate dielectric shift the threshold voltage and cause a time-
dependent device variability. To assess their impact on circuits, it is useful to know their …
dependent device variability. To assess their impact on circuits, it is useful to know their …
NBTI lifetime prediction and kinetics at operation bias based on ultrafast pulse measurement
Predicting negative bias temperature instability (NBTI) lifetime can be dangerous since it is
difficult to assess its safety margin. The common technique uses gate bias V g acceleration …
difficult to assess its safety margin. The common technique uses gate bias V g acceleration …
An analysis of the NBTI-induced threshold voltage shift evaluated by different techniques
Negative bias temperature instability (NBTI) is limiting the lifetime of pMOSFETs, and it is
often monitored by the shift of threshold voltage DeltaV t. Different techniques have been …
often monitored by the shift of threshold voltage DeltaV t. Different techniques have been …
Negative bias temperature instability lifetime prediction: Problems and solutions
Lifetime of pMOSFETs is limited by NBTI. Conventional slow measurement overestimates
lifetime due to recovery. The fast techniques suppress recovery, but cannot give reliable …
lifetime due to recovery. The fast techniques suppress recovery, but cannot give reliable …
Effect of high-k passivation layer on high voltage properties of GaN metal-insulator-semiconductor devices
Y Cai, Y Wang, Y Liang, Y Zhang, W Liu, H Wen… - IEEE …, 2020 - ieeexplore.ieee.org
In this paper, the GaN-based MIS-HEMTs with Si 3 N 4 single-layer passivation, Al 2 O 3/SiN
x bilayer passivation, and ZrO 2/SiN x bilayer passivation are demonstrated. High-k …
x bilayer passivation, and ZrO 2/SiN x bilayer passivation are demonstrated. High-k …
Defects and instabilities in Hf-dielectric/SiON stacks
JF Zhang - Microelectronic engineering, 2009 - Elsevier
In this work, a review on the recent progress in understanding defects and instabilities in Hf-
dielectric/SiON stacks will be given for both nMOSFETs and pMOSFETs. The key issues …
dielectric/SiON stacks will be given for both nMOSFETs and pMOSFETs. The key issues …
Defect loss: A new concept for reliability of MOSFETs
Defect generation limits device lifetime and enhances its variability. Previous works mainly
addressed the generation kinetics and process. The current understanding is that the …
addressed the generation kinetics and process. The current understanding is that the …