Digital circuit design challenges and opportunities in the era of nanoscale CMOS
Well-designed circuits are one key ldquoinsulatingrdquo layer between the increasingly
unruly behavior of scaled complementary metal-oxide-semiconductor devices and the …
unruly behavior of scaled complementary metal-oxide-semiconductor devices and the …
A review on compact modeling of multiple-gate MOSFETs
J Song, B Yu, Y Yuan, Y Taur - IEEE Transactions on Circuits …, 2009 - ieeexplore.ieee.org
This paper reviews recent development on compact modeling of multiple-gate (MG)
MOSFETs. Long-channel core models based on the analytical potential solutions of Poisson …
MOSFETs. Long-channel core models based on the analytical potential solutions of Poisson …
BSIM—SPICE models enable FinFET and UTB IC designs
Two turn-key surface potential-based compact models are developed to simulate multigate
transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is …
transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is …
[图书][B] The physics and modeling of MOSFETS: surface-potential model HiSIM
M Miura-Mattausch - 2008 - books.google.com
This volume provides a timely description of the latest compact MOS transistor models for
circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit …
circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit …
[图书][B] Compact models for integrated circuit design: conventional transistors and beyond
SK Saha - 2015 - library.oapen.org
This modern treatise on compact models for circuit computer-aided design (CAD) presents
industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor …
industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor …
[图书][B] FinFET devices for VLSI circuits and systems
SK Saha - 2020 - taylorfrancis.com
To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged
as the real alternative for use as the next generation device for IC fabrication technology …
as the real alternative for use as the next generation device for IC fabrication technology …
BSIM-CMG: A compact model for multi-gate transistors
MV Dunga, CH Lin, AM Niknejad, C Hu - FinFETs and Other Multi-Gate …, 2008 - Springer
This Chapter describes the physics behind the BSIM-CMG (Berkeley Short-channel IGFET
Model–Common Multi-Gate) compact models for multigate MOSFETs. A compact model …
Model–Common Multi-Gate) compact models for multigate MOSFETs. A compact model …
A universal core model for multiple-gate field-effect transistors. Part I: Charge model
A universal core model for multiple-gate field-effect transistors (Mug-FETs) is proposed. The
proposed charge and drain current models are presented in Parts I and II, respectively. It is …
proposed charge and drain current models are presented in Parts I and II, respectively. It is …
A universal core model for multiple-gate field-effect transistors. Part II: Drain current model
A universal drain current model for multiple-gate field-effect transistors (FETs)(Mug-FETs) is
proposed. In Part I, a universal charge model was derived using the arbitrary potential …
proposed. In Part I, a universal charge model was derived using the arbitrary potential …
An analytical approach for analysis and optimization of formation of field-effect heterotransistors
EL Pankratov, EA Bulaeva - Multidiscipline modeling in materials and …, 2016 - emerald.com
Purpose The purpose of this paper is to analyze and optimize the formation of field-effect
heterotransistors using analytical approach. The approach makes it possible to analyze …
heterotransistors using analytical approach. The approach makes it possible to analyze …