[PDF][PDF] Advances in nanostructured silicon carbide photocatalysts
Industrialization undoubtedly boosts economic development and improves the standard of
living; however, it also leads to some serious problems, including the energy crisis …
living; however, it also leads to some serious problems, including the energy crisis …
纳米SiC 基光催化剂研究进展
何科林, 沈荣晨, 郝磊, 李佑稷, 张鹏, 江吉周… - 物理化学学报, 2022 - whxb.pku.edu.cn
Industrialization undoubtedly boosts economic development and improves the standard of
living; however, it also leads to some serious problems, including the energy crisis …
living; however, it also leads to some serious problems, including the energy crisis …
Memory using insulator traps
L Forbes, JE Geusic - US Patent 6,545,314, 2003 - Google Patents
Integrated circuit memory devices provide both volatile and nonvolatile Storage of data. One
goal in designing Such devices is to increase the Storage density So that more data can be …
goal in designing Such devices is to increase the Storage density So that more data can be …
[HTML][HTML] Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices
S Greenhorn, E Bano, V Stambouli, K Zekentes - Materials, 2024 - mdpi.com
Amorphous silicon carbide (a-SiC) is a wide-bandgap semiconductor with high robustness
and biocompatibility, making it a promising material for applications in biomedical device …
and biocompatibility, making it a promising material for applications in biomedical device …
Low temperature deposition of nanocrystalline silicon carbide films by plasma enhanced chemical vapor deposition and their structural and optical characterization
T Rajagopalan, X Wang, B Lahlouh… - Journal of Applied …, 2003 - pubs.aip.org
Nanocrystalline silicon carbide SiC thin films were deposited by plasma enhanced chemical
vapor deposition technique at different deposition temperatures (Td) ranging from 80 to 575 …
vapor deposition technique at different deposition temperatures (Td) ranging from 80 to 575 …
Highly conductive composite polysilicon gate for CMOS integrated circuits
WP Noble, L Forbes - US Patent 6,492,694, 2002 - Google Patents
Many integrated circuits include a type of transistor known as a metal-oxide-semiconductor,
field-effect transistor, or “mosfet,” which has an insulated gate member that controls its …
field-effect transistor, or “mosfet,” which has an insulated gate member that controls its …
Memory utilizing oxide-nitride nanolaminates
L Forbes, KY Ahn - US Patent 7,847,344, 2010 - Google Patents
Structures, systems and methods for transistors utilizing oxide-nitride nanolaminates are
provided. One transistor embodiment includes a first source? drain region, a second …
provided. One transistor embodiment includes a first source? drain region, a second …
Strong optical nonlinearity of the nonstoichiometric silicon carbide
Enhanced nonlinear refractive indices and absorption coefficients of nonstoichiometric
SixC1− x with varying C/Si composition ratios from 0.51 to 1.83 grown by low-temperature …
SixC1− x with varying C/Si composition ratios from 0.51 to 1.83 grown by low-temperature …
Memory using insulator traps
L Forbes, JE Geusic - US Patent 6,246,606, 2001 - Google Patents
Stored on or removed from respective trap Sites. By also 4,507,673 3/1985 Aoyama et
al.................... 357/23 R adjusting the trapping energy of the point defect trap Sites …
al.................... 357/23 R adjusting the trapping energy of the point defect trap Sites …
Flash memory with nanocrystalline silicon film floating gate
L Forbes - US Patent 5,852,306, 1998 - Google Patents
57 ABSTRACT A memory is described which has memory cells that Store data using hot
electron injection. The data is erased through electron tunneling. The memory cells are …
electron injection. The data is erased through electron tunneling. The memory cells are …