Enhancement of light extraction from light emitting diodes
AI Zhmakin - Physics Reports, 2011 - Elsevier
The large amount of light emitted from a light emitting diode (LED) being trapped inside the
semiconductor structure is the consequence of the large value of the refractive index. The …
semiconductor structure is the consequence of the large value of the refractive index. The …
Angular color shift of micro-LED displays
Sidewall emission of a micro-scale light emitting diode (micro-LED) improves the light
extraction efficiency, but it causes mismatched angular distributions between AlGaInP-based …
extraction efficiency, but it causes mismatched angular distributions between AlGaInP-based …
An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane …
While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV)
sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because …
sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because …
GaN light-emitting diode with monolithically integrated photonic crystals and angled sidewall deflectors for efficient surface emission
In order to obtain efficient surface emission, we propose and demonstrate a GaN light-
emitting diode (LED) structure. A two-dimensional photonic crystal (PC) pattern is integrated …
emitting diode (LED) structure. A two-dimensional photonic crystal (PC) pattern is integrated …
Semiconductor optical emitting device with metallized sidewalls
JM Freund, DL Dreifus - US Patent 9,082,926, 2015 - Google Patents
A semiconductor optical emitting device comprises an at least partially transparent substrate,
an active semiconductor structure, a dielectric layer and a metal layer. The substrate …
an active semiconductor structure, a dielectric layer and a metal layer. The substrate …
Light interaction in sapphire/MgF2/Al triple-layer omnidirectional reflectors in AlGaN-based near ultraviolet light-emitting diodes
This study examined systematically the mechanism of light interaction in the
sapphire/MgF2/Al triple-layer omnidirectional reflectors (ODR) and its effects on the light …
sapphire/MgF2/Al triple-layer omnidirectional reflectors (ODR) and its effects on the light …
[PDF][PDF] Chip designs for high efficiency III-nitride based ultraviolet light emitting diodes with enhanced light extraction
N Lobo Ploch - 2015 - depositonce.tu-berlin.de
The aim of this thesis was the design and fabrication of highly efficient III-nitride based UV
LEDs for use in applications such as water disinfection, medical phototheraphy and gas …
LEDs for use in applications such as water disinfection, medical phototheraphy and gas …
A detail analysis of electrical and optical fluctuations of green light-emitting diodes by correlation method
V Palenskis, J Matukas… - Fluctuation and Noise …, 2010 - World Scientific
A detail analysis of electrical and optical fluctuations of large power (1 W) green light-
emitting diodes (LEDs) is presented. Special attention was directed to measurement and …
emitting diodes (LEDs) is presented. Special attention was directed to measurement and …
High-efficiency micro-LED displays with indistinguishable color shift
Micro-scale light emitting diode (micro-LED) with a chip size less than 100 μm has improved
light extraction efficiency due to increased sidewall emission. However, it causes …
light extraction efficiency due to increased sidewall emission. However, it causes …
Improvement in light output intensity of InGaN/GaN multiple-quantum-well blue light-emitting diode by SiO2/Si3N4 distributed Bragg reflectors and silver back mirror
PH Lei - Thin Solid Films, 2011 - Elsevier
In this article, the light output intensity of InGaN/GaN multiple-quantum-well (MQW) light
emitting diodes (LEDs) is improved by using SiO2/Si3N4 distributed Bragg reflectors (DBRs) …
emitting diodes (LEDs) is improved by using SiO2/Si3N4 distributed Bragg reflectors (DBRs) …