The emergence of wide and ultrawide bandgap semiconductors has revolutionized the
advancement of next-generation power, radio frequency, and opto-electronics, paving the …

Aluminum nitride (AlN) is one of the few electrically insulating materials with excellent
thermal conductivity, but high-quality films typically require exceedingly hot deposition …

Recent observation of high density polarization-induced two-dimensional electron gases in
ultra-thin N-polar GaN layers grown on single-crystal AlN has enabled the development of N …

Aluminum scandium nitride (AlScN) has been receiving increasing interest for radio
frequency microelectromechanical systems because of their higher achievable bandwidths …

The rapid and precise extraction of thermophysical properties remains an enormous
challenge in pump-probe thermoreflectance, and quantum algorithms present significant …

Understanding the emergent electronic structure in twisted atomically thin layers has led to
the exciting field of twistronics. However, practical applications of such systems are …

The distinguished properties of hexagonal boron nitride (⁠ h-BN), specifically its atomically
smooth surface, large critical electric field, and large electronic bandgap, make it ideal for …

Surface-active bonding (SAB) is a promising technique for semiconductors directly bonding.
However, the interlayer of the bonding interface and the reduced layer thickness may affect …

Engineering microstructural defects, like grain boundaries, offers superior control over
transport properties in energy materials. However, technological advancement requires …

With the development of high-power devices, thermal management has become extremely
important for modern electronics. Due to the tiny sizes of components, heat transfer from hot …